Datasheets
R6022YNX3C16 by: ROHM Semiconductor

Power Field-Effect Transistor, 22A I(D), 600V, 0.175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Part Details for R6022YNX3C16 by ROHM Semiconductor

Overview of R6022YNX3C16 by ROHM Semiconductor

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Price & Stock for R6022YNX3C16

Part # Distributor Description Stock Price Buy
DISTI # 80AK5245
Newark Mosfet, N-Ch, 600V, 22A, To-220Ab Rohs Compliant: Yes |Rohm R6022YNX3C16 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 100
  • 1 $3.1600
  • 10 $2.6500
  • 25 $2.4900
  • 50 $2.3100
  • 100 $2.1400
  • 250 $2.0300
  • 500 $1.9000
$1.9000 / $3.1600 Buy Now
DISTI # 846-R6022YNX3C16-ND
DigiKey NCH 600V 22A, TO-220AB, POWER MO Min Qty: 1 Lead time: 23 Weeks Container: Tube 998
In Stock
  • 1 $3.0400
  • 10 $2.5480
  • 100 $2.0616
  • 500 $1.8325
  • 1,000 $1.5691
  • 2,000 $1.4775
  • 5,000 $1.4175
$1.4175 / $3.0400 Buy Now
DISTI # R6022YNX3C16
Avnet Americas Nch 600V 22A, TO-220AB, Power MOSFET: R6022YNX3 is a power MOSFET with low on - resistance, suitable for switching. - Rail/Tube (Alt: R6022YNX3C16) Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
  • 1,000 $1.6783
  • 2,000 $1.6443
  • 4,000 $1.6103
  • 6,000 $1.5763
  • 8,000 $1.5422
  • 10,000 $1.5082
  • 100,000 $1.4742
$1.4742 / $1.6783 Buy Now
DISTI # 755-R6022YNX3C16
Mouser Electronics MOSFET Nch 600V 22A, TO-220AB, Power MOSFET: R6022YNX3 is a power MOSFET with low on - resistance, suitable for switching. RoHS: Compliant 1997
  • 1 $3.0400
  • 10 $2.5500
  • 25 $2.4100
  • 100 $2.0700
  • 250 $1.9500
  • 500 $1.8400
  • 1,000 $1.5600
  • 2,000 $1.4700
  • 5,000 $1.4100
$1.4100 / $3.0400 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $1.5200
$1.5200 Buy Now
Quest Components   80
  • 1 $3.2460
  • 10 $2.3804
  • 33 $2.1640
$2.1640 / $3.2460 Buy Now
DISTI # R6022YNX3C16
Avnet Americas Nch 600V 22A, TO-220AB, Power MOSFET: R6022YNX3 is a power MOSFET with low on - resistance, suitable for switching. - Rail/Tube (Alt: R6022YNX3C16) Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
  • 1,000 $1.6783
  • 2,000 $1.6443
  • 4,000 $1.6103
  • 6,000 $1.5763
  • 8,000 $1.5422
  • 10,000 $1.5082
  • 100,000 $1.4742
$1.4742 / $1.6783 Buy Now
Ameya Holding Limited   Min Qty: 1 100-Authorized Distributor
  • 1 $3.1500
  • 10 $2.8300
  • 100 $2.3200
  • 500 $1.9800
  • 1,000 $1.6600
$1.6600 / $3.1500 Buy Now
DISTI # R6022YNX3C16
Avnet Americas Nch 600V 22A, TO-220AB, Power MOSFET: R6022YNX3 is a power MOSFET with low on - resistance, suitable for switching. - Rail/Tube (Alt: R6022YNX3C16) Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
  • 1,000 $1.6783
  • 2,000 $1.6443
  • 4,000 $1.6103
  • 6,000 $1.5763
  • 8,000 $1.5422
  • 10,000 $1.5082
  • 100,000 $1.4742
$1.4742 / $1.6783 Buy Now
DISTI # 4246776
element14 Asia-Pacific MOSFET, N-CH, 600V, 22A, TO-220AB RoHS: Compliant Min Qty: 1 Container: Each 100
  • 1 $3.0613
  • 10 $2.5706
  • 100 $2.0873
  • 500 $1.8529
  • 1,000 $1.5892
$1.5892 / $3.0613 Buy Now
DISTI # 4246776
Farnell MOSFET, N-CH, 600V, 22A, TO-220AB RoHS: Compliant Min Qty: 1 Lead time: 21 Weeks, 1 Days Container: Each 100
  • 1 $3.3849
  • 10 $2.5231
  • 100 $2.0359
  • 500 $1.8111
  • 1,000 $1.5488
$1.5488 / $3.3849 Buy Now

Part Details for R6022YNX3C16

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R6022YNX3C16 Part Data Attributes

R6022YNX3C16 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R6022YNX3C16 ROHM Semiconductor Power Field-Effect Transistor, 22A I(D), 600V, 0.175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 93 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.175 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 205 W
Pulsed Drain Current-Max (IDM) 66 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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