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Power Field-Effect Transistor, 30A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
R6030ENX-ND
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DigiKey | MOSFET N-CH 600V 30A TO220FM Min Qty: 1 Lead time: 18 Weeks Container: Bulk | Temporarily Out of Stock |
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$2.7569 / $5.6600 | Buy Now |
DISTI #
R6030ENX
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Avnet Americas | Trans MOSFET N-CH 600V ±30A 3-Pin TO-220FM Bulk - Tape and Reel (Alt: R6030ENX) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Container: Reel | 0 |
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$2.7508 / $3.1317 | Buy Now |
DISTI #
755-R6030ENX
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Mouser Electronics | MOSFET 10V Drive Nch MOSFET RoHS: Compliant | 496 |
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$2.8100 / $3.2500 | Buy Now |
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Future Electronics | N-Channel 600 V 0.13 Ohm Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Bag | 0Bag |
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$2.7600 / $3.2000 | Buy Now |
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Future Electronics | N-Channel 600 V 0.13 Ohm Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Tube | 0Tube |
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$2.7600 / $2.8500 | Buy Now |
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Future Electronics | N-Channel 600 V 0.13 Ohm Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Tube | 0Tube |
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$2.7600 / $2.8500 | Buy Now |
DISTI #
36535070
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Verical | Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220FM Bulk RoHS: Compliant Min Qty: 19 Package Multiple: 1 Date Code: 1901 | Americas - 49 |
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$4.1763 / $4.3638 | Buy Now |
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Quest Components | 39 |
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$4.3700 / $6.5550 | Buy Now | |
DISTI #
R6030ENX
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Avnet Americas | Trans MOSFET N-CH 600V ±30A 3-Pin TO-220FM Bulk - Tape and Reel (Alt: R6030ENX) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Container: Reel | 0 |
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$2.7508 / $3.1317 | Buy Now |
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Ameya Holding Limited | N-Channel 600 V 0.13 Ohm Flange Mount Power Mosfet - TO-220FP Min Qty: 1 | 50-Authorized Distributor |
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$3.6900 / $6.0100 | Buy Now |
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|
R6030ENX
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R6030ENX
ROHM Semiconductor
Power Field-Effect Transistor, 30A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | TO-220FM, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 636 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.13 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for R6030ENX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6030ENX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPA60R125C6XKSA1 | Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3 | Infineon Technologies AG | R6030ENX vs IPA60R125C6XKSA1 |
SIHF30N60E-GE3 | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULL PAK-3 | Vishay Intertechnologies | R6030ENX vs SIHF30N60E-GE3 |
SIHF28N60EF-GE3 | Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3 | Vishay Intertechnologies | R6030ENX vs SIHF28N60EF-GE3 |