Datasheets
R6030ENZ4C13 by: ROHM Semiconductor

Power Field-Effect Transistor,

Part Details for R6030ENZ4C13 by ROHM Semiconductor

Overview of R6030ENZ4C13 by ROHM Semiconductor

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Price & Stock for R6030ENZ4C13

Part # Distributor Description Stock Price Buy
DISTI # 38AH5901
Newark Mosfet, N-Ch, 600V, 30A, 150Deg C, 305W, Transistor Polarity:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.115Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Rohm R6030ENZ4C13 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $9.6200
  • 10 $8.2500
  • 25 $7.8600
  • 50 $7.4800
  • 100 $7.2500
  • 250 $6.4900
  • 500 $6.1000
$6.1000 / $9.6200 Buy Now
DISTI # 846-R6030ENZ4C13-ND
DigiKey MOSFET N-CH 600V 30A TO247 Min Qty: 1 Lead time: 18 Weeks Container: Tube 19
In Stock
  • 1 $9.2500
  • 30 $7.3803
  • 120 $6.6036
  • 510 $5.8267
  • 1,020 $5.2440
  • 2,010 $4.9138
$4.9138 / $9.2500 Buy Now
DISTI # R6030ENZ4C13
Avnet Americas Transistor MOSFET N-CH 600V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: R6030ENZ4C13) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 18 Weeks, 0 Days Container: Tube 0
  • 600 $5.6921
  • 1,200 $5.5767
  • 2,400 $5.4613
  • 3,600 $5.3459
  • 4,800 $5.2306
  • 6,000 $5.1152
  • 60,000 $4.9998
$4.9998 / $5.6921 Buy Now
DISTI # 755-R6030ENZ4C13
Mouser Electronics MOSFET Nch 600V 30A Power MOSFET. R6030ENZ4 is a power MOSFET for switching applications. RoHS: Compliant 200
  • 1 $9.2500
  • 10 $7.9300
  • 25 $7.1900
  • 100 $6.7400
  • 250 $6.2100
  • 600 $5.8200
  • 1,200 $4.9100
$4.9100 / $9.2500 Buy Now
Future Electronics 600V,30A,115MOHM,TO-247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Container: Tube 0
Tube
  • 600 $5.5900
$5.5900 Buy Now
DISTI # 77771724
Verical Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 11 Package Multiple: 1 Americas - 596
  • 11 $3.0250
  • 50 $2.8500
  • 100 $2.8375
  • 200 $2.8000
  • 500 $2.7125
$2.7125 / $3.0250 Buy Now
DISTI # 37040087
Verical Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 9 Package Multiple: 1 Date Code: 2001 Americas - 30
  • 9 $8.5542
  • 25 $8.1592
$8.1592 / $8.5542 Buy Now
Quest Components   24
  • 1 $11.4060
  • 4 $8.3644
  • 10 $7.6040
$7.6040 / $11.4060 Buy Now
DISTI # R6030ENZ4C13
Avnet Americas Transistor MOSFET N-CH 600V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: R6030ENZ4C13) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 18 Weeks, 0 Days Container: Tube 0
  • 600 $5.6921
  • 1,200 $5.5767
  • 2,400 $5.4613
  • 3,600 $5.3459
  • 4,800 $5.2306
  • 6,000 $5.1152
  • 60,000 $4.9998
$4.9998 / $5.6921 Buy Now
Ameya Holding Limited   Min Qty: 1 10-Authorized Distributor
  • 1 $8.5750
  • 10 $7.7518
  • 25 $7.3990
  • 100 $6.4092
$6.4092 / $8.5750 Buy Now
DISTI # R6030ENZ4C13
Avnet Americas Transistor MOSFET N-CH 600V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: R6030ENZ4C13) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 18 Weeks, 0 Days Container: Tube 0
  • 600 $5.6921
  • 1,200 $5.5767
  • 2,400 $5.4613
  • 3,600 $5.3459
  • 4,800 $5.2306
  • 6,000 $5.1152
  • 60,000 $4.9998
$4.9998 / $5.6921 Buy Now
DISTI # C1S625901874213
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Tube 596
  • 1 $2.4300
  • 10 $2.3600
  • 50 $2.2200
  • 100 $2.2100
  • 200 $2.1800
  • 500 $2.1100
$2.1100 / $2.4300 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2020 Date Code: 2020 30
  • 1 $11.3200
  • 10 $6.2260
  • 50 $5.6030
  • 100 $4.4470
  • 500 $4.0020
  • 1,000 $3.8020
$3.8020 / $11.3200 Buy Now
DISTI # 3213680
element14 Asia-Pacific MOSFET, N-CH, 600V, 30A, 150DEG C, 305W RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $9.6926
  • 10 $7.5314
  • 100 $6.5057
  • 500 $6.0954
  • 1,000 $5.1430
$5.1430 / $9.6926 Buy Now
DISTI # 3213680
Farnell MOSFET, N-CH, 600V, 30A, 150DEG C, 305W RoHS: Compliant Min Qty: 1 Lead time: 26 Weeks, 1 Days Container: Each 0
  • 1 $9.9417
  • 5 $8.5678
  • 10 $7.1815
  • 50 $6.9567
  • 100 $6.7319
  • 250 $6.2073
$6.2073 / $9.9417 Buy Now

Part Details for R6030ENZ4C13

R6030ENZ4C13 CAD Models

R6030ENZ4C13 Part Data Attributes

R6030ENZ4C13 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R6030ENZ4C13 ROHM Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Date Of Intro 2018-10-10
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 636 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for R6030ENZ4C13

This table gives cross-reference parts and alternative options found for R6030ENZ4C13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6030ENZ4C13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHB30N60E-E3 Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Vishay Intertechnologies R6030ENZ4C13 vs SIHB30N60E-E3
SIHP28N65E-GE3 Power Field-Effect Transistor, 28A I(D), 650V, 0.122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies R6030ENZ4C13 vs SIHP28N65E-GE3
FMP30N60S1FD Power Field-Effect Transistor Fuji Electric Co Ltd R6030ENZ4C13 vs FMP30N60S1FD
R6030ENZ1C9 Power Field-Effect Transistor, 30A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 ROHM Semiconductor R6030ENZ4C13 vs R6030ENZ1C9
IPP60R125C6 Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG R6030ENZ4C13 vs IPP60R125C6
SIHB30N60E-GE3 Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 Vishay Intertechnologies R6030ENZ4C13 vs SIHB30N60E-GE3
IPW60R125C6FKSA1 Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG R6030ENZ4C13 vs IPW60R125C6FKSA1
IPP60R125C6XKSA1 Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG R6030ENZ4C13 vs IPP60R125C6XKSA1
SIHP28N65EF-GE3 Power Field-Effect Transistor, 28A I(D), 650V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies R6030ENZ4C13 vs SIHP28N65EF-GE3
SIHP28N60EF-GE3 Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies R6030ENZ4C13 vs SIHP28N60EF-GE3

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