Part Details for R6030KNZ1C9 by ROHM Semiconductor
Overview of R6030KNZ1C9 by ROHM Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for R6030KNZ1C9
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 16 |
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$6.3080 / $9.4620 | Buy Now | |
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Ameya Holding Limited | MOSFET N-CHANNEL 600V 30A TO247 Min Qty: 1 | 30-Authorized Distributor |
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$4.2594 / $6.3892 | Buy Now |
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DISTI #
2630119
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$4.4167 / $4.8781 | Buy Now |
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DISTI #
2630119
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Farnell | MOSFET, N-CH, 600V, 30A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 19 Weeks, 5 Days Container: Each | 0 |
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$2.7109 | Buy Now |
Part Details for R6030KNZ1C9
R6030KNZ1C9 CAD Models
R6030KNZ1C9 Part Data Attributes
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R6030KNZ1C9
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R6030KNZ1C9
ROHM Semiconductor
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ROHM CO LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Avalanche Energy Rating (Eas) | 636 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.13 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for R6030KNZ1C9
This table gives cross-reference parts and alternative options found for R6030KNZ1C9. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R6030KNZ1C9, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 30NM60L-TA3-T | Power Field-Effect Transistor, | Unisonic Technologies Co Ltd | R6030KNZ1C9 vs 30NM60L-TA3-T |
| 30NM60L-T47-T | Power Field-Effect Transistor, | Unisonic Technologies Co Ltd | R6030KNZ1C9 vs 30NM60L-T47-T |
| R6030KNZ4C13 | Power Field-Effect Transistor, | ROHM Semiconductor | R6030KNZ1C9 vs R6030KNZ4C13 |
| 30NM60G-TA3-T | Power Field-Effect Transistor, | Unisonic Technologies Co Ltd | R6030KNZ1C9 vs 30NM60G-TA3-T |
| 30NM60G-T47-T | Power Field-Effect Transistor, | Unisonic Technologies Co Ltd | R6030KNZ1C9 vs 30NM60G-T47-T |