Datasheets
R6049YNXC7G by: ROHM Semiconductor

Power Field-Effect Transistor, 22A I(D), 600V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN

Part Details for R6049YNXC7G by ROHM Semiconductor

Overview of R6049YNXC7G by ROHM Semiconductor

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Price & Stock for R6049YNXC7G

Part # Distributor Description Stock Price Buy
DISTI # 83AK1022
Newark Mosfet, N-Ch, 600V, 22A, To-220Fm-3 Rohs Compliant: Yes |Rohm R6049YNXC7G Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 100
  • 1 $6.6400
  • 10 $5.9600
  • 25 $5.6300
  • 50 $5.2500
  • 100 $4.8800
  • 250 $4.6300
  • 500 $4.1500
$4.1500 / $6.6400 Buy Now
DISTI # 846-R6049YNXC7G-ND
DigiKey NCH 600V 22A, TO-220FM, POWER MO Min Qty: 1 Lead time: 18 Weeks Container: Tube 980
In Stock
  • 1 $6.3800
  • 10 $5.7260
  • 50 $5.4130
  • 100 $4.6913
  • 250 $4.4508
  • 500 $3.9937
  • 1,000 $3.3681
  • 2,500 $3.1997
$3.1997 / $6.3800 Buy Now
DISTI # R6049YNXC7G
Avnet Americas Nch 600V 22A, TO-220FM, Power MOSFET: R6049YNX is a power MOSFET with low on - resistance, suitable for switching. - Rail/Tube (Alt: R6049YNXC7G) Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
  • 1,000 $3.5254
  • 2,000 $3.4539
  • 4,000 $3.3824
  • 6,000 $3.3110
  • 8,000 $3.2395
  • 10,000 $3.1681
  • 100,000 $3.0966
$3.0966 / $3.5254 Buy Now
DISTI # 755-R6049YNXC7G
Mouser Electronics MOSFET Nch 600V 22A, TO-220FM, Power MOSFET: R6049YNX is a power MOSFET with low on - resistance, suitable for switching. RoHS: Compliant 1974
  • 1 $6.3800
  • 10 $5.3600
  • 25 $5.0600
  • 100 $4.3400
  • 250 $4.0900
  • 500 $3.8500
  • 1,000 $3.1900
  • 2,000 $3.0700
$3.0700 / $6.3800 Buy Now
Future Electronics   RoHS: Non Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $3.1800
$3.1800 Buy Now
Quest Components   80
  • 1 $6.8040
  • 16 $4.5360
  • 56 $4.1958
$4.1958 / $6.8040 Buy Now
DISTI # R6049YNXC7G
TTI MOSFET Nch 600V 22A, TO-220FM, Power MOSFET: R6049YNX is a power MOSFET with low on - resistance, suitable for switching. RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Tube Americas - 0
  • 1,000 $3.1600
  • 2,000 $2.9800
$2.9800 / $3.1600 Buy Now
DISTI # R6049YNXC7G
Avnet Americas Nch 600V 22A, TO-220FM, Power MOSFET: R6049YNX is a power MOSFET with low on - resistance, suitable for switching. - Rail/Tube (Alt: R6049YNXC7G) Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
  • 1,000 $3.5254
  • 2,000 $3.4539
  • 4,000 $3.3824
  • 6,000 $3.3110
  • 8,000 $3.2395
  • 10,000 $3.1681
  • 100,000 $3.0966
$3.0966 / $3.5254 Buy Now
DISTI # R6049YNXC7G
Avnet Americas Nch 600V 22A, TO-220FM, Power MOSFET: R6049YNX is a power MOSFET with low on - resistance, suitable for switching. - Rail/Tube (Alt: R6049YNXC7G) Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
  • 1,000 $3.5254
  • 2,000 $3.4539
  • 4,000 $3.3824
  • 6,000 $3.3110
  • 8,000 $3.2395
  • 10,000 $3.1681
  • 100,000 $3.0966
$3.0966 / $3.5254 Buy Now
DISTI # 4263620
element14 Asia-Pacific MOSFET, N-CH, 600V, 22A, TO-220FM-3 RoHS: Compliant Min Qty: 1 Container: Each 100
  • 1 $7.3592
  • 10 $5.9711
  • 100 $4.8768
  • 500 $4.5242
  • 1,000 $3.9073
$3.9073 / $7.3592 Buy Now
DISTI # 4263620
Farnell MOSFET, N-CH, 600V, 22A, TO-220FM-3 RoHS: Compliant Min Qty: 1 Lead time: 22 Weeks, 1 Days Container: Each 100
  • 1 $8.0249
  • 10 $6.1315
  • 100 $5.1158
  • 500 $4.7648
  • 1,000 $4.1002
$4.1002 / $8.0249 Buy Now

Part Details for R6049YNXC7G

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R6049YNXC7G Part Data Attributes

R6049YNXC7G ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R6049YNXC7G ROHM Semiconductor Power Field-Effect Transistor, 22A I(D), 600V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description TO-220FM, 3 PIN
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 208 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.084 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 90 W
Pulsed Drain Current-Max (IDM) 147 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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