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Transistors / Power Field-Effect Transistors / R6049YNZ4C13
Datasheets
R6049YNZ4C13 by: ROHM Semiconductor

Power Field-Effect Transistor, 49A I(D), 600V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247G, 3 PIN

Part Details for R6049YNZ4C13 by ROHM Semiconductor

Overview of R6049YNZ4C13 by ROHM Semiconductor

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Price & Stock for R6049YNZ4C13

Part # Distributor Description Stock Price Buy
DISTI # 83AK1024
Newark Mosfet, N-Ch, 600V, 49A, To-247G-3 Rohs Compliant: Yes |Rohm R6049YNZ4C13 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 112
  • 1 $6.5300
  • 10 $5.9000
  • 25 $5.6300
  • 50 $5.2500
  • 100 $4.8900
  • 250 $4.6700
  • 500 $4.2500
$4.2500 / $6.5300 Buy Now
DISTI # 846-R6049YNZ4C13-ND
DigiKey NCH 600V 49A, TO-247G, POWER MOS Min Qty: 1 Lead time: 18 Weeks Container: Tube 596
In Stock
  • 1 $6.2800
  • 10 $5.6740
  • 30 $5.4103
  • 120 $4.6977
  • 270 $4.4865
  • 510 $4.0907
  • 1,020 $3.5628
  • 2,520 $3.4309
$3.4309 / $6.2800 Buy Now
DISTI # R6049YNZ4C13
Avnet Americas Nch 600V 49A, TO-247G, Power MOSFET: R6049YNZ4 is a power MOSFET with low on - resistance, suitable for switching. - Rail/Tube (Alt: R6049YNZ4C13) Min Qty: 600 Package Multiple: 600 Container: Tube 0
  • 600 $3.8672
  • 1,200 $3.7889
  • 2,400 $3.7105
  • 3,600 $3.6321
  • 4,800 $3.5537
  • 6,000 $3.4753
  • 60,000 $3.3969
$3.3969 / $3.8672 Buy Now
DISTI # 755-R6049YNZ4C13
Mouser Electronics MOSFET Nch 600V 49A, TO-247G, Power MOSFET: R6049YNZ4 is a power MOSFET with low on - resistance, suitable for switching. RoHS: Compliant 1190
  • 1 $6.2900
  • 10 $5.3900
  • 25 $4.8900
  • 100 $4.4900
  • 250 $4.2300
  • 600 $3.9600
  • 1,200 $3.4400
$3.4400 / $6.2900 Buy Now
Future Electronics   RoHS: Non Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Container: Tube 0
Tube
  • 600 $3.4900
$3.4900 Buy Now
DISTI # R6049YNZ4C13
TTI MOSFET Nch 600V 49A, TO-247G, Power MOSFET: R6049YNZ4 is a power MOSFET with low on - resistance, suitable for switching. RoHS: Compliant pbFree: Pb-Free Min Qty: 600 Package Multiple: 600 Container: Tube Americas - 0
  • 600 $3.4000
  • 1,200 $3.3300
  • 3,000 $3.2700
$3.2700 / $3.4000 Buy Now
DISTI # R6049YNZ4C13
Avnet Americas Nch 600V 49A, TO-247G, Power MOSFET: R6049YNZ4 is a power MOSFET with low on - resistance, suitable for switching. - Rail/Tube (Alt: R6049YNZ4C13) Min Qty: 600 Package Multiple: 600 Container: Tube 0
  • 600 $3.8672
  • 1,200 $3.7889
  • 2,400 $3.7105
  • 3,600 $3.6321
  • 4,800 $3.5537
  • 6,000 $3.4753
  • 60,000 $3.3969
$3.3969 / $3.8672 Buy Now
DISTI # R6049YNZ4C13
Avnet Americas Nch 600V 49A, TO-247G, Power MOSFET: R6049YNZ4 is a power MOSFET with low on - resistance, suitable for switching. - Rail/Tube (Alt: R6049YNZ4C13) Min Qty: 600 Package Multiple: 600 Container: Tube 0
  • 600 $3.8672
  • 1,200 $3.7889
  • 2,400 $3.7105
  • 3,600 $3.6321
  • 4,800 $3.5537
  • 6,000 $3.4753
  • 60,000 $3.3969
$3.3969 / $3.8672 Buy Now
DISTI # R6049YNZ4C13
Avnet Asia Nch 600V 49A, TO-247G, Power MOSFET: R6049YNZ4 is a power MOSFET with low on - resistance, suitable for switching. (Alt: R6049YNZ4C13) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 24 Weeks, 0 Days 0
RFQ
DISTI # 4263621
element14 Asia-Pacific MOSFET, N-CH, 600V, 49A, TO-247G-3 RoHS: Compliant Min Qty: 1 Container: Each 112
  • 1 $8.0647
  • 10 $6.5370
  • 100 $5.3398
  • 500 $4.9578
  • 1,000 $4.2747
$4.2747 / $8.0647 Buy Now
DISTI # 4263621
Farnell MOSFET, N-CH, 600V, 49A, TO-247G-3 RoHS: Compliant Min Qty: 1 Lead time: 22 Weeks, 1 Days Container: Each 112
  • 1 $8.7746
  • 10 $6.7063
  • 100 $5.6032
  • 500 $5.2146
  • 1,000 $4.4876
$4.4876 / $8.7746 Buy Now

Part Details for R6049YNZ4C13

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R6049YNZ4C13 Part Data Attributes

Parametric Data
R6049YNZ4C13 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R6049YNZ4C13 ROHM Semiconductor Power Field-Effect Transistor, 49A I(D), 600V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247G, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description TO-247G, 3 PIN
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 208 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 49 A
Drain-source On Resistance-Max 0.084 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 448 W
Pulsed Drain Current-Max (IDM) 147 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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