Datasheets
R8003KND3TL1 by: ROHM Semiconductor

Power Field-Effect Transistor,

Part Details for R8003KND3TL1 by ROHM Semiconductor

Overview of R8003KND3TL1 by ROHM Semiconductor

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Price & Stock for R8003KND3TL1

Part # Distributor Description Stock Price Buy
DISTI # 846-R8003KND3TL1CT-ND
DigiKey HIGH-SPEED SWITCHING NCH 800V 3A Min Qty: 1 Lead time: 30 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 908
In Stock
  • 1 $2.2300
  • 10 $1.8510
  • 100 $1.4732
  • 500 $1.2465
  • 1,000 $1.0577
  • 2,500 $1.0048
  • 5,000 $0.9670
$0.9670 / $2.2300 Buy Now
DISTI # R8003KND3TL1
Avnet Americas Transistor MOSFET N-CH 800V 3A 3-Pin TO-252 T/R - Tape and Reel (Alt: R8003KND3TL1) Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $1.1070
  • 5,000 $1.0846
  • 10,000 $1.0622
  • 15,000 $1.0397
  • 20,000 $1.0173
  • 25,000 $0.9948
  • 250,000 $0.9724
$0.9724 / $1.1070 Buy Now
DISTI # 755-R8003KND3TL1
Mouser Electronics MOSFET NCH 800V 3A POWER MOSFET RoHS: Compliant 8171
  • 1 $2.2300
  • 10 $1.8600
  • 100 $1.4800
  • 250 $1.3600
  • 500 $1.2400
  • 1,000 $1.1900
  • 2,500 $1.0100
  • 5,000 $0.9700
$0.9700 / $2.2300 Buy Now
Future Electronics MOSFET RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Cut Tape/Mini-Reel 70
Cut Tape/Mini-Reel
  • 1 $1.3300
  • 15 $1.2000
  • 75 $1.1300
  • 250 $1.0800
  • 1,250 $0.9800
$0.9800 / $1.3300 Buy Now
DISTI # 76845603
Verical Trans MOSFET N-CH 800V 3A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant Min Qty: 23 Package Multiple: 1 Americas - 2500
  • 23 $1.3875
  • 50 $1.2875
  • 100 $1.0888
  • 200 $1.0288
  • 500 $1.0262
  • 1,000 $0.9275
  • 2,000 $0.8737
  • 2,500 $0.8713
$0.8713 / $1.3875 Buy Now
DISTI # 67619275
Verical Trans MOSFET N-CH 800V 3A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant Min Qty: 29 Package Multiple: 1 Date Code: 2301 Americas - 2480
  • 29 $2.6390
  • 50 $2.5385
  • 100 $2.4523
  • 250 $2.3779
  • 500 $2.3133
  • 1,000 $2.2567
$2.2567 / $2.6390 Buy Now
Quest Components   1984
  • 1 $3.5640
  • 456 $1.9602
  • 1,021 $1.7820
$1.7820 / $3.5640 Buy Now
DISTI # R8003KND3TL1
TTI MOSFET NCH 800V 3A POWER MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 0
  • 2,500 $1.0000
  • 5,000 $0.9600
$0.9600 / $1.0000 Buy Now
DISTI # R8003KND3TL1
Avnet Americas Transistor MOSFET N-CH 800V 3A 3-Pin TO-252 T/R - Tape and Reel (Alt: R8003KND3TL1) Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $1.1070
  • 5,000 $1.0846
  • 10,000 $1.0622
  • 15,000 $1.0397
  • 20,000 $1.0173
  • 25,000 $0.9948
  • 250,000 $0.9724
$0.9724 / $1.1070 Buy Now
DISTI # R8003KND3TL1
Avnet Asia Transistor MOSFET N-CH 800V 3A 3-Pin TO-252 T/R (Alt: R8003KND3TL1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days 0
RFQ
DISTI # C1S625901959684
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 2500
  • 1 $1.6600
  • 10 $1.1100
  • 50 $1.0300
  • 100 $0.8710
  • 200 $0.8230
  • 500 $0.8210
  • 1,000 $0.7420
  • 2,000 $0.6990
  • 2,500 $0.6970
$0.6970 / $1.6600 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 2480
  • 1 $3.5370
  • 10 $1.9450
  • 50 $1.7510
  • 100 $1.3890
  • 500 $1.2500
  • 1,000 $1.1880
$1.1880 / $3.5370 Buy Now
DISTI # 4202980RL
Farnell MOSFET, N-CH, 800V, 3A, TO-252 RoHS: Compliant Min Qty: 2500 Lead time: 27 Weeks, 1 Days Container: Reel 0
  • 2,500 $1.0140
$1.0140 Buy Now
DISTI # 4202980
Farnell MOSFET, N-CH, 800V, 3A, TO-252 RoHS: Compliant Min Qty: 2500 Lead time: 27 Weeks, 1 Days Container: Cut Tape 0
  • 2,500 $1.0140
$1.0140 Buy Now

Part Details for R8003KND3TL1

R8003KND3TL1 CAD Models

R8003KND3TL1 Part Data Attributes:

R8003KND3TL1 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R8003KND3TL1 ROHM Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2019-11-15
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 19 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 1.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 9 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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