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Part Details for R8005ANX by ROHM Semiconductor
Overview of R8005ANX by ROHM Semiconductor
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- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for R8005ANX
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
R8005ANX-ND
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DigiKey | MOSFET N-CH 800V 5A TO220FM Min Qty: 1 Lead time: 23 Weeks Container: Bulk |
335 In Stock |
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$1.3826 / $2.0900 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Reel | 0Reel |
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$0.9360 | Buy Now |
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Quest Components | 400 |
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$1.4372 / $3.4840 | Buy Now | |
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Ameya Holding Limited | Transistors FETs, MOSFETs Single Min Qty: 1 | 120-Authorized Distributor |
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$1.1050 / $1.7000 | Buy Now |
Part Details for R8005ANX
R8005ANX CAD Models
R8005ANX Part Data Attributes
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R8005ANX
ROHM Semiconductor
Buy Now
Datasheet
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R8005ANX
ROHM Semiconductor
Power Field-Effect Transistor, 5A I(D), 800V, 2.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | TO-220FM, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Avalanche Energy Rating (Eas) | 1.66 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 2.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |