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Transistors / Power Field-Effect Transistors / R8006KND3TL1
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R8006KND3TL1 by: ROHM Semiconductor

Power Field-Effect Transistor,

Part Details for R8006KND3TL1 by ROHM Semiconductor

Overview of R8006KND3TL1 by ROHM Semiconductor

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Applications Consumer Electronics Space Technology Aerospace and Defense Energy and Power Systems Renewable Energy

Price & Stock for R8006KND3TL1

Part # Distributor Description Stock Price Buy
DISTI # 846-R8006KND3TL1CT-ND
DigiKey HIGH-SPEED SWITCHING NCH 800V 6A Min Qty: 1 Lead time: 30 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1395
In Stock
  • 1 $3.3300
  • 10 $2.7960
  • 100 $2.2616
  • 500 $2.0103
  • 1,000 $1.7213
  • 2,500 $1.6208
  • 5,000 $1.5550
$1.5550 / $3.3300 Buy Now
DISTI # R8006KND3TL1
Avnet Americas Transistor MOSFET N-Channel 800V 6A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: R8006KND3TL1) Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $1.8411
  • 5,000 $1.8038
  • 10,000 $1.7665
  • 15,000 $1.7292
  • 20,000 $1.6918
  • 25,000 $1.6545
  • 250,000 $1.6172
$1.6172 / $1.8411 Buy Now
DISTI # 755-R8006KND3TL1
Mouser Electronics MOSFET NCH 800V 6A POWER MOSFET RoHS: Compliant 4886
  • 1 $3.3300
  • 10 $2.8000
  • 25 $2.6400
  • 100 $2.2700
  • 250 $2.1400
  • 500 $2.0200
  • 1,000 $1.8800
  • 2,500 $1.5900
  • 5,000 $1.5600
$1.5600 / $3.3300 Buy Now
Future Electronics N-Channel 800 V 6 A 83 W Surface Mount Power MOSFET - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $1.5800
$1.5800 Buy Now
Future Electronics N-Channel 800 V 6 A 83 W Surface Mount Power MOSFET - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $1.8500
  • 15 $1.7400
  • 75 $1.6800
  • 250 $1.6300
  • 1,250 $1.5400
$1.5400 / $1.8500 Buy Now
Quest Components   1806
  • 1 $4.4670
  • 364 $2.4569
  • 815 $2.2335
$2.2335 / $4.4670 Buy Now
DISTI # R8006KND3TL1
TTI MOSFET NCH 800V 6A POWER MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 0
  • 2,500 $1.5700
$1.5700 Buy Now
DISTI # R8006KND3TL1
Avnet Americas Transistor MOSFET N-Channel 800V 6A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: R8006KND3TL1) Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $1.8411
  • 5,000 $1.8038
  • 10,000 $1.7665
  • 15,000 $1.7292
  • 20,000 $1.6918
  • 25,000 $1.6545
  • 250,000 $1.6172
$1.6172 / $1.8411 Buy Now
DISTI # R8006KND3TL1
Avnet Americas Transistor MOSFET N-Channel 800V 6A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: R8006KND3TL1) Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $1.8411
  • 5,000 $1.8038
  • 10,000 $1.7665
  • 15,000 $1.7292
  • 20,000 $1.6918
  • 25,000 $1.6545
  • 250,000 $1.6172
$1.6172 / $1.8411 Buy Now
DISTI # R8006KND3TL1
Avnet Silica Transistor MOSFET N-Channel 800V 6A 3-Pin TO-252 Emboss T/R (Alt: R8006KND3TL1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 4 Weeks, 5 Days Silica - 0
Buy Now

Part Details for R8006KND3TL1

R8006KND3TL1 CAD Models

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R8006KND3TL1 Part Data Attributes

Parametric Data
R8006KND3TL1 ROHM Semiconductor
Buy Now Datasheet
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R8006KND3TL1 ROHM Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2019-11-15
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 76 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for R8006KND3TL1

This table gives cross-reference parts and alternative options found for R8006KND3TL1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R8006KND3TL1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPU80R900P7 Power Field-Effect Transistor, Infineon Technologies AG R8006KND3TL1 vs IPU80R900P7
IPS80R900P7 Power Field-Effect Transistor, Infineon Technologies AG R8006KND3TL1 vs IPS80R900P7
MMD80R900PCRH Power Field-Effect Transistor, MagnaChip Semiconductor Ltd R8006KND3TL1 vs MMD80R900PCRH

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