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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RD3G500GNTLCT-ND
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DigiKey | MOSFET N-CH 40V 50A TO252 Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2470 In Stock |
|
$0.6500 / $2.3500 | Buy Now |
DISTI #
RD3G500GNTL
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Avnet Americas | Transistor Power MOSFET N-CH 40V 50A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: RD3G500GNTL) Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
|
$0.6760 / $0.7696 | Buy Now |
DISTI #
755-RD3G500GNTL
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Mouser Electronics | MOSFETs RD3G500GN is the low on - resistance MOSFET for switching application. RoHS: Compliant | 1824 |
|
$0.6490 / $1.5500 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel | 0Reel |
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$0.6850 | Buy Now |
DISTI #
63393850
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Verical | Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) DPAK T/R Min Qty: 96 Package Multiple: 1 Date Code: 1801 | Americas - 2471 |
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$0.7688 / $0.8991 | Buy Now |
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Bristol Electronics | 2125 |
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RFQ | ||
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Quest Components | 1976 |
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$0.7890 / $2.1040 | Buy Now | |
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Quest Components | 1700 |
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$0.7800 / $2.0800 | Buy Now | |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2018 Date Code: 2018 | 2490 |
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$0.5260 / $1.2720 | Buy Now |
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RD3G500GNTL
ROHM Semiconductor
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Datasheet
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Compare Parts:
RD3G500GNTL
ROHM Semiconductor
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-08-21 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 94 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.0063 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |