Part Details for RDD022N60TL by ROHM Semiconductor
Overview of RDD022N60TL by ROHM Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for RDD022N60TL
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RDD022N60TL-ND
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DigiKey | MOSFET N-CH 600V 2A CPT3 Lead time: 16 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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Buy Now | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.4600 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2013 Date Code: 2013 | 100 |
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$0.3170 / $0.4810 | Buy Now |
Part Details for RDD022N60TL
RDD022N60TL CAD Models
RDD022N60TL Part Data Attributes
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RDD022N60TL
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RDD022N60TL
ROHM Semiconductor
Power Field-Effect Transistor, 2A I(D), 600V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CPT3, SC-63, 3/2 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 1.4 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 6.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 6 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RDD022N60TL
This table gives cross-reference parts and alternative options found for RDD022N60TL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RDD022N60TL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N60KG-TA3-T | Power Field-Effect Transistor, 2A I(D), 600V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Unisonic Technologies Co Ltd | RDD022N60TL vs 2N60KG-TA3-T |
| 2N60KG-TN3-T | Power Field-Effect Transistor, 2A I(D), 600V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Unisonic Technologies Co Ltd | RDD022N60TL vs 2N60KG-TN3-T |
| 2N60KL-TNS-T | Power Field-Effect Transistor, 2A I(D), 600V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251S, 3 PIN | Unisonic Technologies Co Ltd | RDD022N60TL vs 2N60KL-TNS-T |
| 2N60KL-TN3-T | Power Field-Effect Transistor, 2A I(D), 600V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Unisonic Technologies Co Ltd | RDD022N60TL vs 2N60KL-TN3-T |
| 2N60KL-TA3-T | Power Field-Effect Transistor, 2A I(D), 600V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Unisonic Technologies Co Ltd | RDD022N60TL vs 2N60KL-TA3-T |
| 2N60KG-TNS-T | Power Field-Effect Transistor, 2A I(D), 600V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251S, 3 PIN | Unisonic Technologies Co Ltd | RDD022N60TL vs 2N60KG-TNS-T |