Part Details for RF1S23N06LE by Harris Semiconductor
Overview of RF1S23N06LE by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Security and Surveillance
Environmental Monitoring
Internet of Things (IoT)
Industrial Automation
Audio and Video Systems
Smart Cities
Agriculture Technology
Renewable Energy
Communication and Networking
Entertainment and Gaming
Price & Stock for RF1S23N06LE
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RF1S23N06LE-ND
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DigiKey | 23A, 60V, 0.065OHM, N-CHANNEL, Min Qty: 423 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2400 In Stock |
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$0.7100 | Buy Now |
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Rochester Electronics | 23A, 60V, 0.065ohm, N-Channel, POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 2400 |
|
$0.6093 / $0.7168 | Buy Now |
Part Details for RF1S23N06LE
RF1S23N06LE CAD Models
RF1S23N06LE Part Data Attributes
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RF1S23N06LE
Harris Semiconductor
Buy Now
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RF1S23N06LE
Harris Semiconductor
Power Field-Effect Transistor, 23A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | AVALANCHE RATED, ESD PROTECTED, LOGIC LEVEL COMPATIBLE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 23 A | |
Drain-source On Resistance-Max | 0.065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 75 W | |
Power Dissipation-Max (Abs) | 75 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 100 ns | |
Turn-on Time-Max (ton) | 160 ns |