Part Details for RF1S42N03LSM by Harris Semiconductor
Overview of RF1S42N03LSM by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Telecommunications
Price & Stock for RF1S42N03LSM
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 3 | 835 |
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$0.7875 / $2.2500 | Buy Now |
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Quest Components | 42 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 668 |
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$0.9375 / $3.0000 | Buy Now |
Part Details for RF1S42N03LSM
RF1S42N03LSM CAD Models
RF1S42N03LSM Part Data Attributes
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RF1S42N03LSM
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RF1S42N03LSM
Harris Semiconductor
Power Field-Effect Transistor, 42A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 42 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 90 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |