Datasheets
RF1S42N03LSM by:

Power Field-Effect Transistor, 42A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Details for RF1S42N03LSM by Harris Semiconductor

Overview of RF1S42N03LSM by Harris Semiconductor

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Applications Telecommunications

Price & Stock for RF1S42N03LSM

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 3 835
  • 3 $2.2500
  • 10 $1.6875
  • 31 $1.4062
  • 108 $0.8438
  • 357 $0.7875
$0.7875 / $2.2500 Buy Now
Quest Components 42 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 668
  • 1 $3.0000
  • 287 $0.9750
  • 616 $0.9375
$0.9375 / $3.0000 Buy Now

Part Details for RF1S42N03LSM

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RF1S42N03LSM Part Data Attributes

RF1S42N03LSM Harris Semiconductor
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RF1S42N03LSM Harris Semiconductor Power Field-Effect Transistor, 42A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 42 A
Drain-source On Resistance-Max 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 90 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

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