Part Details for RFD10P03LSM by Harris Semiconductor
Overview of RFD10P03LSM by Harris Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RFD10P03LSM
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 102 |
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RFQ | ||
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Bristol Electronics | Min Qty: 4 | 71 |
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$0.5625 / $1.5000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-252AA | 56 |
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$1.0000 / $2.0000 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-252AA | 81 |
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$1.4300 / $2.6000 | Buy Now |
Part Details for RFD10P03LSM
RFD10P03LSM CAD Models
RFD10P03LSM Part Data Attributes
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RFD10P03LSM
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RFD10P03LSM
Harris Semiconductor
Power Field-Effect Transistor, 10A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 60 W | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 25 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 120 ns | |
Turn-on Time-Max (ton) | 110 ns |
Alternate Parts for RFD10P03LSM
This table gives cross-reference parts and alternative options found for RFD10P03LSM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD10P03LSM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RFD10P03LSM | 10A, 30V, 0.22ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | RFD10P03LSM vs RFD10P03LSM |
RFD10P03LSM | Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | RFD10P03LSM vs RFD10P03LSM |
RFD10P03LSM9A | Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | RFD10P03LSM vs RFD10P03LSM9A |
RFD10P03LSM9A | Power Field-Effect Transistor, 10A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | RFD10P03LSM vs RFD10P03LSM9A |
RFD10P03LSM9A | 10A, 30V, 0.22ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | RFD10P03LSM vs RFD10P03LSM9A |