Part Details for RFD10P03LSM9A by Fairchild Semiconductor Corporation
Overview of RFD10P03LSM9A by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RFD10P03LSM9A
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 3 | 2295 |
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$0.4875 / $1.8750 | Buy Now |
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Bristol Electronics | 950 |
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RFQ | ||
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Quest Components | 10 A, 30 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | 1836 |
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$0.6250 / $2.5000 | Buy Now |
Part Details for RFD10P03LSM9A
RFD10P03LSM9A CAD Models
RFD10P03LSM9A Part Data Attributes
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RFD10P03LSM9A
Fairchild Semiconductor Corporation
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Datasheet
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RFD10P03LSM9A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.22 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 65 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for RFD10P03LSM9A
This table gives cross-reference parts and alternative options found for RFD10P03LSM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD10P03LSM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RFD10P03LSM | 10A, 30V, 0.22ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | RFD10P03LSM9A vs RFD10P03LSM |
RFD10P03LSM | Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | RFD10P03LSM9A vs RFD10P03LSM |
RFD10P03LSM9A | Power Field-Effect Transistor, 10A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | RFD10P03LSM9A vs RFD10P03LSM9A |
RFD10P03LSM9A | 10A, 30V, 0.22ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | RFD10P03LSM9A vs RFD10P03LSM9A |
RFD10P03LSM | Power Field-Effect Transistor, 10A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | RFD10P03LSM9A vs RFD10P03LSM |