Part Details for RFD10P03LSM9A by Harris Semiconductor
Overview of RFD10P03LSM9A by Harris Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for RFD10P03LSM9A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 10 A, 30 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | 1512 |
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$0.9000 / $2.4000 | Buy Now |
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ComSIT USA | TO-252 LOGIC LEVEL GATE (5V) DEVICE Power Field-Effect Transistor, 10A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | Europe - 28230 |
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RFQ |
Part Details for RFD10P03LSM9A
RFD10P03LSM9A CAD Models
RFD10P03LSM9A Part Data Attributes
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RFD10P03LSM9A
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RFD10P03LSM9A
Harris Semiconductor
Power Field-Effect Transistor, 10A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RFD10P03LSM9A
This table gives cross-reference parts and alternative options found for RFD10P03LSM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD10P03LSM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD10P03LSM | 10A, 30V, 0.22ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | RFD10P03LSM9A vs RFD10P03LSM |
| RFD10P03LSM | Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | RFD10P03LSM9A vs RFD10P03LSM |
| RFD10P03LSM9A | Power Field-Effect Transistor, 10A I(D), 30V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | RFD10P03LSM9A vs RFD10P03LSM9A |
| RFD10P03LSM9A | 10A, 30V, 0.22ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | RFD10P03LSM9A vs RFD10P03LSM9A |
| RFD10P03LSM | Power Field-Effect Transistor, 10A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | RFD10P03LSM9A vs RFD10P03LSM |