Part Details for RFD14N05LSM by Fairchild Semiconductor Corporation
Overview of RFD14N05LSM by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for RFD14N05LSM
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 20 |
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RFQ | ||
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Bristol Electronics | 1016 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 16 |
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$0.5040 / $0.6300 | Buy Now |
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ComSIT USA | 50 V, 14 A, 0.100 OHM, LOGIC LEVEL, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | Europe - 578 |
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RFQ |
Part Details for RFD14N05LSM
RFD14N05LSM CAD Models
RFD14N05LSM Part Data Attributes
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RFD14N05LSM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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RFD14N05LSM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | DPAK | |
| Package Description | TO-252, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 48 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RFD14N05LSM
This table gives cross-reference parts and alternative options found for RFD14N05LSM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05LSM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD14N05LSM | N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ, 1800-TUBE | onsemi | RFD14N05LSM vs RFD14N05LSM |
| SPD14N05 | Power Field-Effect Transistor, 14A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | RFD14N05LSM vs SPD14N05 |
| STD16NE06L | 16A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | STMicroelectronics | RFD14N05LSM vs STD16NE06L |
| RFD14N05LSM9A | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, 3 PIN | Fairchild Semiconductor Corporation | RFD14N05LSM vs RFD14N05LSM9A |
| RFD14N05LSM9A | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | RFD14N05LSM vs RFD14N05LSM9A |
| RFD14N05LSM9A | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, 3 PIN | Rochester Electronics LLC | RFD14N05LSM vs RFD14N05LSM9A |
| RFD14N05LSM | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, 3 PIN | Rochester Electronics LLC | RFD14N05LSM vs RFD14N05LSM |
| RFD14N05LSM | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | RFD14N05LSM vs RFD14N05LSM |