Datasheets
RFD20N03SM9A by:

Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN

Part Details for RFD20N03SM9A by Harris Semiconductor

Overview of RFD20N03SM9A by Harris Semiconductor

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Applications Industrial Automation Motor control systems

Price & Stock for RFD20N03SM9A

Part # Distributor Description Stock Price Buy
DISTI # 2156-RFD20N03SM9A-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 355 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 4911
In Stock
  • 355 $0.8500
$0.8500 Buy Now
Rochester Electronics 20A, 30V, 0.025 OHM, N-Channel POWER MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 2500
  • 1 $0.8533
  • 25 $0.8362
  • 100 $0.8021
  • 500 $0.7680
  • 1,000 $0.7253
$0.7253 / $0.8533 Buy Now

Part Details for RFD20N03SM9A

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RFD20N03SM9A Part Data Attributes

RFD20N03SM9A Harris Semiconductor
Buy Now Datasheet
Compare Parts:
RFD20N03SM9A Harris Semiconductor Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature MEGAFET
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFD20N03SM9A

This table gives cross-reference parts and alternative options found for RFD20N03SM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD20N03SM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFD20N03SM Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation RFD20N03SM9A vs RFD20N03SM
RFD20N03SM9A Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN Fairchild Semiconductor Corporation RFD20N03SM9A vs RFD20N03SM9A
RFD20N03SM Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Harris Semiconductor RFD20N03SM9A vs RFD20N03SM
RFD20N03SM9A 20A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, 3 PIN Intersil Corporation RFD20N03SM9A vs RFD20N03SM9A
Part Number Description Manufacturer Compare
934056643127 Power Field-Effect Transistor Nexperia RFD20N03SM9A vs 934056643127
PSMN5R0-80PS Power Field-Effect Transistor Nexperia RFD20N03SM9A vs PSMN5R0-80PS
RFD20N03SM Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Harris Semiconductor RFD20N03SM9A vs RFD20N03SM
RFD16N03LSM9A Power Field-Effect Transistor, 16A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor RFD20N03SM9A vs RFD16N03LSM9A
RFD16N06LESM9A N-Channel Logic Level Power MOSFET 60V, 16A, 47mΩ, 2500-REEL onsemi RFD20N03SM9A vs RFD16N06LESM9A
BUK9509-75A 75A, 75V, 0.00995ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors RFD20N03SM9A vs BUK9509-75A
IRLZ44ZL Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN International Rectifier RFD20N03SM9A vs IRLZ44ZL
IRF1010NSPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG RFD20N03SM9A vs IRF1010NSPBF
RF1S50N06LESM Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation RFD20N03SM9A vs RF1S50N06LESM
BUK9509-75A,127 N-channel TrenchMOS logic level FET TO-220 3-Pin NXP Semiconductors RFD20N03SM9A vs BUK9509-75A,127

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