Part Details for RFG30P05 by Harris Semiconductor
Overview of RFG30P05 by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Telecommunications
Price & Stock for RFG30P05
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RFG30P05-ND
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DigiKey | P-CHANNEL POWER MOSFET Min Qty: 107 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
1617 In Stock |
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$2.8100 | Buy Now |
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Rochester Electronics | 30A, 50V, 0.065ohm, P-Channel, POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 1617 |
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$2.4100 / $2.8300 | Buy Now |
Part Details for RFG30P05
RFG30P05 CAD Models
RFG30P05 Part Data Attributes:
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RFG30P05
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RFG30P05
Harris Semiconductor
Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 120 W | |
| Power Dissipation-Max (Abs) | 120 W | |
| Pulsed Drain Current-Max (IDM) | 75 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 100 ns | |
| Turn-on Time-Max (ton) | 80 ns |
Alternate Parts for RFG30P05
This table gives cross-reference parts and alternative options found for RFG30P05. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFG30P05, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFG30P05 | 30A, 50V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | RFG30P05 vs RFG30P05 |
| RFG30P05 | Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Fairchild Semiconductor Corporation | RFG30P05 vs RFG30P05 |