Part Details for RFG40N10LE by Harris Semiconductor
Overview of RFG40N10LE by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for RFG40N10LE
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RFG40N10LE-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 247 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
489 In Stock |
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$1.2200 | Buy Now |
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Rochester Electronics | 40A, 100V, 0.040 OHM, N-Channel POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 489 |
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$1.0400 / $1.2300 | Buy Now |
Part Details for RFG40N10LE
RFG40N10LE CAD Models
RFG40N10LE Part Data Attributes
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RFG40N10LE
Harris Semiconductor
Buy Now
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Compare Parts:
RFG40N10LE
Harris Semiconductor
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, ESD PROTECTED, LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 165 ns | |
| Turn-on Time-Max (ton) | 200 ns |
Alternate Parts for RFG40N10LE
This table gives cross-reference parts and alternative options found for RFG40N10LE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFG40N10LE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFP45N06 | Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | RFG40N10LE vs RFP45N06 |
| SSS7N60A | Power Field-Effect Transistor, 4A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Samsung Semiconductor | RFG40N10LE vs SSS7N60A |
| RFG50N06LE | 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Rochester Electronics LLC | RFG40N10LE vs RFG50N06LE |
| RFG75N05E | Power Field-Effect Transistor, 75A I(D), 50V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Fairchild Semiconductor Corporation | RFG40N10LE vs RFG75N05E |
| SSS4N90A | Power Field-Effect Transistor, 2.5A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | RFG40N10LE vs SSS4N90A |
| STP5NB60 | 5A, 600V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | RFG40N10LE vs STP5NB60 |
| RFP50N06 | 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | RFG40N10LE vs RFP50N06 |
| RFG45N06 | Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Fairchild Semiconductor Corporation | RFG40N10LE vs RFG45N06 |
| RFP4N05 | 4A, 50V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | RFG40N10LE vs RFP4N05 |
| RFP2N12L | 2A, 120V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | RFG40N10LE vs RFP2N12L |