Part Details for RFP7N10LE by Harris Semiconductor
Overview of RFP7N10LE by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for RFP7N10LE
RFP7N10LE CAD Models
RFP7N10LE Part Data Attributes
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RFP7N10LE
Harris Semiconductor
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Datasheet
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RFP7N10LE
Harris Semiconductor
Power Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | MEGAFET, LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 47 W | |
| Power Dissipation-Max (Abs) | 47 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 60 ns | |
| Turn-on Time-Max (ton) | 110 ns |
Alternate Parts for RFP7N10LE
This table gives cross-reference parts and alternative options found for RFP7N10LE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP7N10LE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD7N10LE | 7A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Intersil Corporation | RFP7N10LE vs RFD7N10LE |
| RFD7N10LE | 7A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Rochester Electronics LLC | RFP7N10LE vs RFD7N10LE |
| RFD7N10LE | Power Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | RFP7N10LE vs RFD7N10LE |