Datasheets
RGC80TSX8RGC11 by: ROHM Semiconductor

Insulated Gate Bipolar Transistor,

Part Details for RGC80TSX8RGC11 by ROHM Semiconductor

Overview of RGC80TSX8RGC11 by ROHM Semiconductor

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Price & Stock for RGC80TSX8RGC11

Part # Distributor Description Stock Price Buy
DISTI # RGC80TSX8RGC11-ND
DigiKey IGBT TRENCH FLD 1800V 80A TO247N Min Qty: 1 Lead time: 22 Weeks Container: Tube 5
In Stock
  • 1 $9.4000
  • 30 $7.5053
  • 120 $6.7152
  • 510 $5.9252
  • 1,020 $5.3327
$5.3327 / $9.4000 Buy Now
DISTI # RGC80TSX8RGC11
Avnet Americas Transistor IGBT Chip N-CH 1800V 80A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGC80TSX8RGC11) Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $5.7883
  • 900 $5.6710
  • 1,800 $5.5536
  • 2,700 $5.4363
  • 3,600 $5.3190
  • 4,500 $5.2016
  • 45,000 $5.0843
$5.0843 / $5.7883 Buy Now
DISTI # 755-RGC80TSX8RGC11
Mouser Electronics IGBT Transistors RGC80TSX8R is the reverse conducting IGBT. The datasheet is coming soon. RoHS: Compliant 1188
  • 1 $9.4000
  • 10 $7.7800
  • 25 $6.7800
  • 100 $6.4500
  • 250 $5.9600
  • 450 $5.4000
  • 900 $4.9900
$4.9900 / $9.4000 Buy Now
Future Electronics RGC80TSX8R is the reverse conducting IGBT for voltage-resonance inverter, IH app RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 360
Tube
  • 30 $5.4400
  • 90 $5.3900
  • 150 $5.3800
  • 450 $5.3300
  • 750 $5.3000
$5.3000 / $5.4400 Buy Now
Quest Components   280
  • 1 $10.9020
  • 35 $6.7229
  • 150 $5.9961
$5.9961 / $10.9020 Buy Now
DISTI # RGC80TSX8RGC11
Avnet Americas Transistor IGBT Chip N-CH 1800V 80A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGC80TSX8RGC11) Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $5.7883
  • 900 $5.6710
  • 1,800 $5.5536
  • 2,700 $5.4363
  • 3,600 $5.3190
  • 4,500 $5.2016
  • 45,000 $5.0843
$5.0843 / $5.7883 Buy Now
DISTI # RGC80TSX8RGC11
TME Transistor: IGBT, 1.8kV, 40A, 267W, TO247-3 Min Qty: 1 0
  • 1 $8.7400
  • 5 $7.8500
  • 30 $6.9600
  • 90 $6.2400
  • 450 $5.6000
$5.6000 / $8.7400 RFQ
DISTI # RGC80TSX8RGC11
Avnet Americas Transistor IGBT Chip N-CH 1800V 80A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGC80TSX8RGC11) Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $5.7883
  • 900 $5.6710
  • 1,800 $5.5536
  • 2,700 $5.4363
  • 3,600 $5.3190
  • 4,500 $5.2016
  • 45,000 $5.0843
$5.0843 / $5.7883 Buy Now
DISTI # RGC80TSX8RGC11
Avnet Asia Transistor IGBT Chip N-CH 1800V 80A 3-Pin TO-247N Tube (Alt: RGC80TSX8RGC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 32 Weeks, 0 Days 0
RFQ
CHIPMALL.COM LIMITED IGBT 350
  • 10 $6.3358
  • 100 $5.5925
$5.5925 / $6.3358 Buy Now

Part Details for RGC80TSX8RGC11

RGC80TSX8RGC11 CAD Models

RGC80TSX8RGC11 Part Data Attributes

RGC80TSX8RGC11 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RGC80TSX8RGC11 ROHM Semiconductor Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 1800 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 30 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 535 W
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 725 ns
Turn-on Time-Nom (ton) 120 ns
VCEsat-Max 5 V

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