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Insulated Gate Bipolar Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RGC80TSX8RGC11-ND
|
DigiKey | IGBT TRENCH FLD 1800V 80A TO247N Min Qty: 1 Lead time: 22 Weeks Container: Tube |
5 In Stock |
|
$5.3327 / $9.4000 | Buy Now |
DISTI #
RGC80TSX8RGC11
|
Avnet Americas | Transistor IGBT Chip N-CH 1800V 80A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGC80TSX8RGC11) Min Qty: 450 Package Multiple: 450 Container: Tube | 0 |
|
$5.0843 / $5.7883 | Buy Now |
DISTI #
755-RGC80TSX8RGC11
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Mouser Electronics | IGBT Transistors RGC80TSX8R is the reverse conducting IGBT. The datasheet is coming soon. RoHS: Compliant | 1188 |
|
$4.9900 / $9.4000 | Buy Now |
|
Future Electronics | RGC80TSX8R is the reverse conducting IGBT for voltage-resonance inverter, IH app RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 360Tube |
|
$5.3000 / $5.4400 | Buy Now |
|
Quest Components | 280 |
|
$5.9961 / $10.9020 | Buy Now | |
DISTI #
RGC80TSX8RGC11
|
Avnet Americas | Transistor IGBT Chip N-CH 1800V 80A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGC80TSX8RGC11) Min Qty: 450 Package Multiple: 450 Container: Tube | 0 |
|
$5.0843 / $5.7883 | Buy Now |
DISTI #
RGC80TSX8RGC11
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TME | Transistor: IGBT, 1.8kV, 40A, 267W, TO247-3 Min Qty: 1 | 0 |
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$5.6000 / $8.7400 | RFQ |
DISTI #
RGC80TSX8RGC11
|
Avnet Americas | Transistor IGBT Chip N-CH 1800V 80A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGC80TSX8RGC11) Min Qty: 450 Package Multiple: 450 Container: Tube | 0 |
|
$5.0843 / $5.7883 | Buy Now |
DISTI #
RGC80TSX8RGC11
|
Avnet Asia | Transistor IGBT Chip N-CH 1800V 80A 3-Pin TO-247N Tube (Alt: RGC80TSX8RGC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 32 Weeks, 0 Days | 0 |
|
RFQ | |
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CHIPMALL.COM LIMITED | IGBT | 350 |
|
$5.5925 / $6.3358 | Buy Now |
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RGC80TSX8RGC11
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RGC80TSX8RGC11
ROHM Semiconductor
Insulated Gate Bipolar Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Collector Current-Max (IC) | 80 A | |
Collector-Emitter Voltage-Max | 1800 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 7 V | |
Gate-Emitter Voltage-Max | 30 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 535 W | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 725 ns | |
Turn-on Time-Nom (ton) | 120 ns | |
VCEsat-Max | 5 V |