Datasheets
RGCL60TS60DGC11 by: ROHM Semiconductor

Insulated Gate Bipolar Transistor,

Part Details for RGCL60TS60DGC11 by ROHM Semiconductor

Overview of RGCL60TS60DGC11 by ROHM Semiconductor

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Price & Stock for RGCL60TS60DGC11

Part # Distributor Description Stock Price Buy
DISTI # 10AH0537
Newark Igbt, 600V, 48A, 175Deg C, 111W, Dc Collector Current:48A, Collector Emitter Saturation Voltage Vce(On):1.4V, Power Dissipation Pd:111W, Collector Emitter Voltage V(Br)Ceo:600V, Transistor Case Style:To-247N, No. Of Pins:3Pins, Rohs Compliant: Yes |Rohm RGCL60TS60DGC11 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $4.8000
  • 10 $3.9500
  • 25 $3.6100
  • 50 $3.2600
  • 100 $3.2200
  • 250 $3.1900
  • 900 $2.6000
$2.6000 / $4.8000 Buy Now
DISTI # RGCL60TS60DGC11-ND
DigiKey IGBT TRNCH FIELD 600V 48A TO247N Min Qty: 1 Lead time: 22 Weeks Container: Bulk 169
In Stock
  • 1 $4.6200
  • 10 $3.8810
  • 450 $2.7908
  • 1,350 $2.3897
  • 2,250 $2.2501
$2.2501 / $4.6200 Buy Now
DISTI # RGCL60TS60DGC11
Avnet Americas ROHRGCL60TS60DGC11 - Bulk (Alt: RGCL60TS60DGC11) Min Qty: 450 Package Multiple: 450 Container: Bulk 0
  • 450 $2.5560
  • 900 $2.5042
  • 1,800 $2.4523
  • 2,700 $2.4005
  • 3,600 $2.3487
  • 4,500 $2.2969
  • 45,000 $2.2451
$2.2451 / $2.5560 Buy Now
DISTI # 755-RGCL60TS60DGC11
Mouser Electronics IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. RoHS: Compliant 291
  • 1 $4.6200
  • 10 $3.8000
  • 25 $3.1300
  • 100 $3.0700
  • 250 $2.5000
  • 900 $2.2500
  • 2,700 $2.2400
$2.2400 / $4.6200 Buy Now
Future Electronics 600V ,30A , TO-247GE IGBT RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube 0
Tube
  • 450 $2.3200
  • 900 $2.2900
  • 1,350 $2.2700
  • 1,800 $2.2600
  • 2,250 $2.2100
$2.2100 / $2.3200 Buy Now
DISTI # RGCL60TS60DGC11
Avnet Americas ROHRGCL60TS60DGC11 - Bulk (Alt: RGCL60TS60DGC11) Min Qty: 450 Package Multiple: 450 Container: Bulk 0
  • 450 $2.5560
  • 900 $2.5042
  • 1,800 $2.4523
  • 2,700 $2.4005
  • 3,600 $2.3487
  • 4,500 $2.2969
  • 45,000 $2.2451
$2.2451 / $2.5560 Buy Now
DISTI # RGCL60TS60DGC11
TME Transistor: IGBT, 600V, 30A, 55W, TO247-3 Min Qty: 1 0
  • 1 $3.0300
  • 5 $2.7300
  • 30 $2.4200
  • 90 $2.1700
  • 450 $1.9800
$1.9800 / $3.0300 RFQ
Ameya Holding Limited Transistors IGBTs Single Min Qty: 1 69-Authorized Distributor
  • 1 $4.0123
  • 100 $3.0123
  • 200 $2.1023
  • 450 $1.8390
$1.8390 / $4.0123 Buy Now
DISTI # RGCL60TS60DGC11
Avnet Silica ROHRGCL60TS60DGC11 (Alt: RGCL60TS60DGC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 3 Weeks, 0 Days Silica - 0
Buy Now
DISTI # 3132309
element14 Asia-Pacific IGBT, 600V, 48A, 175DEG C, 111W RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $4.6350
  • 10 $3.1441
  • 100 $2.5168
  • 500 $2.3839
  • 1,000 $2.2585
$2.2585 / $4.6350 Buy Now
DISTI # 3132309
Farnell IGBT, 600V, 48A, 175DEG C, 111W RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 0
  • 1 $5.1395
  • 10 $3.1186
  • 100 $2.4949
  • 500 $2.3577
  • 1,000 $2.2454
$2.2454 / $5.1395 Buy Now

Part Details for RGCL60TS60DGC11

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RGCL60TS60DGC11 Part Data Attributes:

RGCL60TS60DGC11 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RGCL60TS60DGC11 ROHM Semiconductor Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description TO-247N, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Collector Current-Max (IC) 48 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 30 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 111 W
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 479 ns
Turn-on Time-Nom (ton) 85 ns
VCEsat-Max 1.8 V

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