Datasheets
RGS60TS65DHRC11 by: ROHM Semiconductor

Insulated Gate Bipolar Transistor,

Part Details for RGS60TS65DHRC11 by ROHM Semiconductor

Overview of RGS60TS65DHRC11 by ROHM Semiconductor

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Applications Space Technology Aerospace and Defense

Price & Stock for RGS60TS65DHRC11

Part # Distributor Description Stock Price Buy
DISTI # 846-RGS60TS65DHRC11-ND
DigiKey IGBT TRNCH FIELD 650V 56A TO247N Min Qty: 1 Lead time: 22 Weeks Container: Tube 450
In Stock
  • 1 $6.9200
  • 30 $5.5267
  • 120 $4.9450
  • 510 $4.3632
  • 1,020 $3.9269
  • 2,010 $3.6796
$3.6796 / $6.9200 Buy Now
DISTI # RGS60TS65DHRC11
Avnet Americas Transistor I GBT N-CH 650V 30A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGS60TS65DHRC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 22 Weeks, 0 Days Container: Tube 0
  • 450 $4.2624
  • 900 $4.1760
  • 1,800 $4.0896
  • 2,700 $4.0032
  • 3,600 $3.9168
  • 4,500 $3.8304
  • 45,000 $3.7440
$3.7440 / $4.2624 Buy Now
DISTI # 755-RGS60TS65DHRC11
Mouser Electronics IGBT Transistors 650V 30A Field Stop Trench IGBT. ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. RoHS: Compliant 450
  • 1 $6.9200
  • 10 $5.9300
  • 25 $4.6400
  • 100 $4.4000
  • 250 $4.3700
  • 450 $4.0000
  • 900 $3.6300
$3.6300 / $6.9200 Buy Now
Future Electronics 650V 30 A Field Stop Trench IGBT RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 7
Tube
  • 1 $4.1400
  • 20 $3.9800
  • 75 $3.8600
  • 200 $3.7700
  • 750 $3.5600
$3.5600 / $4.1400 Buy Now
Future Electronics 650V 30 A Field Stop Trench IGBT RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $3.7500
  • 900 $3.6500
$3.6500 / $3.7500 Buy Now
Quest Components   720
  • 1 $7.4490
  • 219 $4.0970
  • 489 $3.7245
$3.7245 / $7.4490 Buy Now
DISTI # RGS60TS65DHRC11
Avnet Americas Transistor I GBT N-CH 650V 30A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGS60TS65DHRC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 22 Weeks, 0 Days Container: Tube 0
  • 450 $4.2624
  • 900 $4.1760
  • 1,800 $4.0896
  • 2,700 $4.0032
  • 3,600 $3.9168
  • 4,500 $3.8304
  • 45,000 $3.7440
$3.7440 / $4.2624 Buy Now
DISTI # RGS60TS65DHRC11
TME Transistor: IGBT, 650V, 30A, 111W, TO247-3 Min Qty: 1 430
  • 1 $5.9700
  • 5 $5.3700
  • 30 $4.7300
  • 90 $4.2600
  • 450 $3.8200
$3.8200 / $5.9700 Buy Now
DISTI # RGS60TS65DHRC11
Avnet Americas Transistor I GBT N-CH 650V 30A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGS60TS65DHRC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 22 Weeks, 0 Days Container: Tube 0
  • 450 $4.2624
  • 900 $4.1760
  • 1,800 $4.0896
  • 2,700 $4.0032
  • 3,600 $3.9168
  • 4,500 $3.8304
  • 45,000 $3.7440
$3.7440 / $4.2624 Buy Now
ComSIT USA 650V 30A FIELD STOP TRENCH IGBT Insulated Gate Bipolar Transistor, 56A I(C), 650V V(BR)CES, N-Channel, TO-247 RoHS: Compliant Europe - 450
RFQ
DISTI # RGS60TS65DHRC11
Avnet Silica Transistor I GBT N-CH 650V 30A 3-Pin TO-247N Tube (Alt: RGS60TS65DHRC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 4 Weeks, 1 Days Silica - 0
Buy Now

Part Details for RGS60TS65DHRC11

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RGS60TS65DHRC11 Part Data Attributes

RGS60TS65DHRC11 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RGS60TS65DHRC11 ROHM Semiconductor Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 22 Weeks
Samacsys Manufacturer ROHM Semiconductor
Collector Current-Max (IC) 56 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 30 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 223 W
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 290 ns
Turn-on Time-Nom (ton) 46 ns
VCEsat-Max 2.1 V

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