Part Details for RGS60TS65DHRC11 by ROHM Semiconductor
Overview of RGS60TS65DHRC11 by ROHM Semiconductor
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Space Technology
Aerospace and Defense
Price & Stock for RGS60TS65DHRC11
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
846-RGS60TS65DHRC11-ND
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DigiKey | IGBT TRNCH FIELD 650V 56A TO247N Min Qty: 1 Lead time: 22 Weeks Container: Tube |
450 In Stock |
|
$3.6796 / $6.9200 | Buy Now |
DISTI #
RGS60TS65DHRC11
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Avnet Americas | Transistor I GBT N-CH 650V 30A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGS60TS65DHRC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 22 Weeks, 0 Days Container: Tube | 0 |
|
$3.7440 / $4.2624 | Buy Now |
DISTI #
755-RGS60TS65DHRC11
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Mouser Electronics | IGBT Transistors 650V 30A Field Stop Trench IGBT. ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. RoHS: Compliant | 450 |
|
$3.6300 / $6.9200 | Buy Now |
|
Future Electronics | 650V 30 A Field Stop Trench IGBT RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 7Tube |
|
$3.5600 / $4.1400 | Buy Now |
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Future Electronics | 650V 30 A Field Stop Trench IGBT RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 30 Container: Tube | 0Tube |
|
$3.6500 / $3.7500 | Buy Now |
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Quest Components | 720 |
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$3.7245 / $7.4490 | Buy Now | |
DISTI #
RGS60TS65DHRC11
|
Avnet Americas | Transistor I GBT N-CH 650V 30A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGS60TS65DHRC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 22 Weeks, 0 Days Container: Tube | 0 |
|
$3.7440 / $4.2624 | Buy Now |
DISTI #
RGS60TS65DHRC11
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TME | Transistor: IGBT, 650V, 30A, 111W, TO247-3 Min Qty: 1 | 430 |
|
$3.8200 / $5.9700 | Buy Now |
DISTI #
RGS60TS65DHRC11
|
Avnet Americas | Transistor I GBT N-CH 650V 30A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGS60TS65DHRC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 22 Weeks, 0 Days Container: Tube | 0 |
|
$3.7440 / $4.2624 | Buy Now |
|
ComSIT USA | 650V 30A FIELD STOP TRENCH IGBT Insulated Gate Bipolar Transistor, 56A I(C), 650V V(BR)CES, N-Channel, TO-247 RoHS: Compliant | Europe - 450 |
|
RFQ |
Part Details for RGS60TS65DHRC11
RGS60TS65DHRC11 CAD Models
RGS60TS65DHRC11 Part Data Attributes
|
RGS60TS65DHRC11
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RGS60TS65DHRC11
ROHM Semiconductor
Insulated Gate Bipolar Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Samacsys Manufacturer | ROHM Semiconductor | |
Collector Current-Max (IC) | 56 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 7 V | |
Gate-Emitter Voltage-Max | 30 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 223 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 290 ns | |
Turn-on Time-Nom (ton) | 46 ns | |
VCEsat-Max | 2.1 V |