Datasheets
RGS80TSX2GC11 by: ROHM Semiconductor

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247N, 3 PIN

Part Details for RGS80TSX2GC11 by ROHM Semiconductor

Overview of RGS80TSX2GC11 by ROHM Semiconductor

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Price & Stock for RGS80TSX2GC11

Part # Distributor Description Stock Price Buy
DISTI # 91AH8882
Newark Igbt, 1.2Kv, 80A, 555W, To-247N Rohs Compliant: Yes |Rohm RGS80TSX2GC11 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 131
  • 1 $10.5500
  • 10 $9.0500
  • 25 $8.6300
  • 50 $8.2100
  • 100 $7.9600
  • 250 $7.7000
$7.7000 / $10.5500 Buy Now
DISTI # 846-RGS80TSX2GC11-ND
DigiKey IGBT TRENCH FS 1200V 80A TO247N Min Qty: 1 Lead time: 22 Weeks Container: Tube 251
In Stock
  • 1 $10.1400
  • 30 $8.0983
  • 120 $7.2458
  • 510 $6.3933
  • 1,020 $5.7540
$5.7540 / $10.1400 Buy Now
DISTI # RGS80TSX2GC11
Avnet Americas Transistor IGBT 1200V 40A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGS80TSX2GC11) Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $6.2456
  • 900 $6.1190
  • 1,800 $5.9924
  • 2,700 $5.8658
  • 3,600 $5.7392
  • 4,500 $5.6126
  • 45,000 $5.4860
$5.4860 / $6.2456 Buy Now
DISTI # 755-RGS80TSX2GC11
Mouser Electronics IGBT Transistors 10us Short-Circuit Tolerance, 1200V 40A, Field Stop Trench IGBT RoHS: Compliant 888
  • 1 $10.1400
  • 10 $9.3400
  • 25 $7.9900
  • 100 $7.2500
  • 450 $6.5300
  • 900 $5.7500
$5.7500 / $10.1400 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube 0
Tube
  • 450 $5.8700
$5.8700 Buy Now
DISTI # 68483023
Verical Trans IGBT Chip N-CH 1200V 80A 555W 3-Pin(3+Tab) TO-247N Tube Min Qty: 12 Package Multiple: 1 Date Code: 2001 Americas - 450
  • 12 $6.7055
  • 25 $6.4174
  • 50 $6.1729
  • 100 $5.9635
  • 250 $5.7826
$5.7826 / $6.7055 Buy Now
DISTI # 77293654
Verical Trans IGBT Chip N-CH 1200V 80A 555W 3-Pin(3+Tab) TO-247N Tube Min Qty: 12 Package Multiple: 1 Date Code: 2001 Americas - 450
  • 12 $6.7055
  • 25 $6.4174
  • 50 $6.1729
  • 100 $5.9635
  • 250 $5.7826
$5.7826 / $6.7055 Buy Now
Quest Components   720
  • 1 $11.3160
  • 144 $6.2238
  • 322 $5.6580
$5.6580 / $11.3160 Buy Now
DISTI # RGS80TSX2GC11
Avnet Americas Transistor IGBT 1200V 40A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGS80TSX2GC11) Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $6.2456
  • 900 $6.1190
  • 1,800 $5.9924
  • 2,700 $5.8658
  • 3,600 $5.7392
  • 4,500 $5.6126
  • 45,000 $5.4860
$5.4860 / $6.2456 Buy Now
DISTI # 3580051
element14 Asia-Pacific IGBT, 1.2KV, 80A, 555W, TO-247N RoHS: Compliant Min Qty: 1 Container: Each 131
  • 1 $10.7027
  • 5 $9.5143
  • 10 $8.3260
  • 50 $8.0676
  • 100 $7.8093
  • 250 $7.6543
$7.6543 / $10.7027 Buy Now
DISTI # 3580051
Farnell IGBT, 1.2KV, 80A, 555W, TO-247N RoHS: Compliant Min Qty: 1 Lead time: 29 Weeks, 1 Days Container: Each 131
  • 1 $10.8583
  • 5 $9.3805
  • 10 $7.9026
  • 50 $7.6647
  • 100 $7.4142
  • 250 $7.2639
$7.2639 / $10.8583 Buy Now

Part Details for RGS80TSX2GC11

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RGS80TSX2GC11 Part Data Attributes:

RGS80TSX2GC11 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RGS80TSX2GC11 ROHM Semiconductor Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247N, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 30 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 629 ns
Turn-on Time-Nom (ton) 89 ns
VCEsat-Max 2.1 V

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