Datasheets
RGT20NL65GTL by: ROHM Semiconductor

Insulated Gate Bipolar Transistor,

Part Details for RGT20NL65GTL by ROHM Semiconductor

Overview of RGT20NL65GTL by ROHM Semiconductor

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Price & Stock for RGT20NL65GTL

Part # Distributor Description Stock Price Buy
DISTI # 45AJ7256
Newark Transistor, Igbt, 650V, 20A/106W/To-263 Rohs Compliant: Yes |Rohm RGT20NL65GTL Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 926
  • 1 $2.2700
  • 10 $1.8900
  • 25 $1.7700
  • 50 $1.6300
  • 100 $1.5100
  • 250 $1.4500
  • 500 $1.2700
  • 1,000 $1.0700
$1.0700 / $2.2700 Buy Now
DISTI # 846-RGT20NL65GTLCT-ND
DigiKey IGBT TRENCH FLD 650V 20A TO263AB Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1000
In Stock
  • 1 $2.1800
  • 10 $1.8110
  • 100 $1.4417
  • 500 $1.2199
  • 1,000 $1.0351
  • 2,000 $0.9833
  • 5,000 $0.9463
  • 10,000 $0.9150
$0.9150 / $2.1800 Buy Now
DISTI # RGT20NL65GTL
Avnet Americas Transistor IGBT 65V 10A 3-Pin TO-263L T/R - Tape and Reel (Alt: RGT20NL65GTL) Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
  • 1,000 $1.0834
  • 2,000 $1.0614
  • 4,000 $1.0394
  • 6,000 $1.0175
  • 8,000 $0.9955
  • 10,000 $0.9736
  • 100,000 $0.9516
$0.9516 / $1.0834 Buy Now
DISTI # 755-RGT20NL65GTL
Mouser Electronics IGBT Transistors 650V 10A Field Stop Trench IGBT RoHS: Compliant 1000
  • 1 $2.1800
  • 10 $1.8200
  • 100 $1.4500
  • 250 $1.3900
  • 500 $1.2200
  • 1,000 $1.0300
  • 2,000 $0.9830
  • 5,000 $0.9460
$0.9460 / $2.1800 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $0.9760
$0.9760 Buy Now
DISTI # RGT20NL65GTL
Avnet Americas Transistor IGBT 65V 10A 3-Pin TO-263L T/R - Tape and Reel (Alt: RGT20NL65GTL) Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
  • 1,000 $1.0834
  • 2,000 $1.0614
  • 4,000 $1.0394
  • 6,000 $1.0175
  • 8,000 $0.9955
  • 10,000 $0.9736
  • 100,000 $0.9516
$0.9516 / $1.0834 Buy Now
DISTI # RGT20NL65GTL
Avnet Americas Transistor IGBT 65V 10A 3-Pin TO-263L T/R - Tape and Reel (Alt: RGT20NL65GTL) Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
  • 1,000 $1.0834
  • 2,000 $1.0614
  • 4,000 $1.0394
  • 6,000 $1.0175
  • 8,000 $0.9955
  • 10,000 $0.9736
  • 100,000 $0.9516
$0.9516 / $1.0834 Buy Now
DISTI # 3757534RL
element14 Asia-Pacific TRANSISTOR, IGBT, 650V, 20A/106W/TO-263 RoHS: Compliant Min Qty: 100 Container: Reel 926
  • 100 $1.4631
  • 500 $1.2793
  • 1,000 $1.0661
$1.0661 / $1.4631 Buy Now
DISTI # 3757534
element14 Asia-Pacific TRANSISTOR, IGBT, 650V, 20A/106W/TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape 926
  • 1 $2.2940
  • 10 $1.9116
  • 100 $1.4631
  • 500 $1.2793
  • 1,000 $1.0661
$1.0661 / $2.2940 Buy Now
DISTI # 3757534
Farnell TRANSISTOR, IGBT, 650V, 20A/106W/TO-263 RoHS: Compliant Min Qty: 1 Lead time: 45 Weeks, 1 Days Container: Cut Tape 926
  • 1 $2.8254
  • 10 $2.2603
  • 25 $2.1096
  • 100 $1.8083
  • 500 $1.4943
  • 1,000 $1.1553
  • 3,000 $1.1126
$1.1126 / $2.8254 Buy Now

Part Details for RGT20NL65GTL

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RGT20NL65GTL Part Data Attributes

RGT20NL65GTL ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RGT20NL65GTL ROHM Semiconductor Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Case Connection COLLECTOR
Collector Current-Max (IC) 20 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 30 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 106 W
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 174 ns
Turn-on Time-Nom (ton) 31 ns
VCEsat-Max 2.1 V

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