Part Details for RGT30TM65DGC9 by ROHM Semiconductor
Overview of RGT30TM65DGC9 by ROHM Semiconductor
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for RGT30TM65DGC9
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
10AH0560
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Newark | Igbt, 650V, 14A, 175Deg C, 32W, Dc Collector Current:14A, Collector Emitter Saturation Voltage Vce(On):1.65V, Power Dissipation Pd:32W, Collector Emitter Voltage V(Br)Ceo:650V, Transistor Case Style:To-220Nfm, No. Of Pins:3Pins, Rohs Compliant: Yes |Rohm RGT30TM65DGC9 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$1.1400 / $1.5200 | Buy Now |
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DISTI #
RGT30TM65DGC9-ND
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DigiKey | IGBT TRNCH FLD 650V 14A TO220NFM Min Qty: 1 Lead time: 22 Weeks Container: Tube |
774 In Stock |
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$0.5269 / $2.0000 | Buy Now |
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DISTI #
RGT30TM65DGC9
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Avnet Americas | Transistor I GBT N-CH 650V 14A 3-Pin TO-220NFM T/R - Rail/Tube (Alt: RGT30TM65DGC9) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
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$1.3156 / $1.4978 | Buy Now |
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DISTI #
755-RGT30TM65DGC9
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Mouser Electronics | IGBTs RGT30TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder. RoHS: Compliant | 3874 |
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$1.2200 / $1.4200 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks Container: Tube | 0Tube |
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$1.3400 | Buy Now |
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Quest Components | 800 |
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$1.2015 / $3.2040 | Buy Now | |
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DISTI #
RGT30TM65DGC9
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TME | Transistor: IGBT, 650V, 8A, 16W, TO220NFM Min Qty: 1 | 0 |
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$1.2400 / $2.6200 | RFQ |
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ComSIT USA | 650V 15A FIELD STOP TRENCH IGBT Insulated Gate Bipolar Transistor, 14A I(C), 650V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant |
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RFQ | |
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DISTI #
RGT30TM65DGC9
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Avnet Silica | Transistor I GBT N-CH 650V 14A 3-Pin TO-220NFM T/R (Alt: RGT30TM65DGC9) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 29 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
C1S625901704206
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Chip1Stop | IGBT discrete Container: Tube | 800 |
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$0.2100 / $0.4970 | Buy Now |
Part Details for RGT30TM65DGC9
RGT30TM65DGC9 CAD Models
RGT30TM65DGC9 Part Data Attributes
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RGT30TM65DGC9
ROHM Semiconductor
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Datasheet
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Compare Parts:
RGT30TM65DGC9
ROHM Semiconductor
Insulated Gate Bipolar Transistor, 14A I(C), 650V V(BR)CES, N-Channel, TO-220AB, TO-220NFM, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2017-12-20 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 14 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 204 ns | |
| Turn-on Time-Nom (ton) | 40 ns |