Datasheets
RGTH00TS65DGC13 by: ROHM Semiconductor

Insulated Gate Bipolar Transistor, 85A I(C), 650V V(BR)CES, N-Channel, TO-247,

Part Details for RGTH00TS65DGC13 by ROHM Semiconductor

Overview of RGTH00TS65DGC13 by ROHM Semiconductor

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Price & Stock for RGTH00TS65DGC13

Part # Distributor Description Stock Price Buy
DISTI # 846-RGTH00TS65DGC13-ND
DigiKey IGBT TRNCH FIELD 650V 85A TO247G Min Qty: 1 Lead time: 22 Weeks Container: Tube 593
In Stock
  • 1 $6.2900
  • 10 $5.3900
  • 100 $4.4917
  • 600 $3.9632
  • 1,200 $3.5669
  • 2,400 $3.3423
$3.3423 / $6.2900 Buy Now
DISTI # RGTH00TS65DGC13
Avnet Americas Transistor IGBT Chip 650V 85A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGTH00TS65DGC13) Min Qty: 600 Package Multiple: 600 Lead time: 22 Weeks, 0 Days Container: Tube 0
  • 600 $3.8717
  • 1,200 $3.7932
  • 2,400 $3.7147
  • 3,600 $3.6362
  • 4,800 $3.5578
  • 6,000 $3.4793
  • 60,000 $3.4008
$3.4008 / $3.8717 Buy Now
DISTI # 755-RGTH00TS65DGC13
Mouser Electronics IGBT Transistors High-Speed Switching Type, 650V 30A, Built in FRD, TO-247N, Field Stop Trench IGBT RoHS: Compliant 600
  • 1 $6.4200
  • 10 $5.5300
  • 25 $4.9700
  • 100 $4.8900
  • 250 $4.4900
$4.4900 / $6.4200 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Container: Tube 0
Tube
  • 600 $3.4900
$3.4900 Buy Now
Quest Components   24
  • 1 $7.2810
  • 5 $5.3394
  • 15 $4.8540
$4.8540 / $7.2810 Buy Now
DISTI # RGTH00TS65DGC13
Avnet Americas Transistor IGBT Chip 650V 85A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGTH00TS65DGC13) Min Qty: 600 Package Multiple: 600 Lead time: 22 Weeks, 0 Days Container: Tube 0
  • 600 $3.8717
  • 1,200 $3.7932
  • 2,400 $3.7147
  • 3,600 $3.6362
  • 4,800 $3.5578
  • 6,000 $3.4793
  • 60,000 $3.4008
$3.4008 / $3.8717 Buy Now
Ameya Holding Limited   Min Qty: 1 30-Authorized Distributor
  • 1 $5.6969
  • 10 $4.3729
  • 50 $3.7996
  • 100 $3.3589
  • 500 $3.1812
  • 1,000 $2.9586
$2.9586 / $5.6969 Buy Now
DISTI # RGTH00TS65DGC13
Avnet Americas Transistor IGBT Chip 650V 85A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGTH00TS65DGC13) Min Qty: 600 Package Multiple: 600 Lead time: 22 Weeks, 0 Days Container: Tube 0
  • 600 $3.8717
  • 1,200 $3.7932
  • 2,400 $3.7147
  • 3,600 $3.6362
  • 4,800 $3.5578
  • 6,000 $3.4793
  • 60,000 $3.4008
$3.4008 / $3.8717 Buy Now

Part Details for RGTH00TS65DGC13

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RGTH00TS65DGC13 Part Data Attributes

RGTH00TS65DGC13 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RGTH00TS65DGC13 ROHM Semiconductor Insulated Gate Bipolar Transistor, 85A I(C), 650V V(BR)CES, N-Channel, TO-247,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Reach Compliance Code compliant
Factory Lead Time 22 Weeks
Samacsys Manufacturer ROHM Semiconductor
Collector Current-Max (IC) 85 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 30 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 277 W
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 221 ns
Turn-on Time-Nom (ton) 102 ns
VCEsat-Max 2.1 V

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