Datasheets
RGW00TS65DC11 by: ROHM Semiconductor

Insulated Gate Bipolar Transistor,

Part Details for RGW00TS65DC11 by ROHM Semiconductor

Overview of RGW00TS65DC11 by ROHM Semiconductor

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Price & Stock for RGW00TS65DC11

Part # Distributor Description Stock Price Buy
DISTI # RGW00TS65DC11
Avnet Silica (Alt: RGW00TS65DC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 13 Weeks, 0 Days Silica - 0
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Part Details for RGW00TS65DC11

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RGW00TS65DC11 Part Data Attributes

RGW00TS65DC11 ROHM Semiconductor
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RGW00TS65DC11 ROHM Semiconductor Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2017-11-16
Collector Current-Max (IC) 96 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 273 ns
Turn-on Time-Nom (ton) 72 ns

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