Datasheets
RGW00TS65DHRC11 by: ROHM Semiconductor

Insulated Gate Bipolar Transistor, 96A I(C), 650V V(BR)CES, N-Channel, TO-247,

Part Details for RGW00TS65DHRC11 by ROHM Semiconductor

Overview of RGW00TS65DHRC11 by ROHM Semiconductor

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Price & Stock for RGW00TS65DHRC11

Part # Distributor Description Stock Price Buy
DISTI # 846-RGW00TS65DHRC11-ND
DigiKey IGBT TRNCH FIELD 650V 96A TO247N Min Qty: 1 Lead time: 22 Weeks Container: Tube 425
In Stock
  • 1 $7.8700
  • 10 $6.7460
  • 450 $4.9601
  • 1,350 $4.4641
  • 2,250 $4.1830
$4.1830 / $7.8700 Buy Now
DISTI # RGW00TS65DHRC11
Avnet Americas Transistor IGBT Chip 650V 96A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGW00TS65DHRC11) Min Qty: 450 Package Multiple: 450 Lead time: 22 Weeks, 0 Days Container: Tube 0
  • 450 $4.8455
  • 900 $4.7473
  • 1,800 $4.6491
  • 2,700 $4.5509
  • 3,600 $4.4526
  • 4,500 $4.3544
  • 45,000 $4.2562
$4.2562 / $4.8455 Buy Now
DISTI # 755-RGW00TS65DHRC11
Mouser Electronics IGBT Transistors High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive. RoHS: Compliant 450
  • 1 $7.8700
  • 10 $6.7500
  • 25 $5.6200
  • 250 $4.9600
  • 450 $4.4600
  • 900 $4.1800
$4.1800 / $7.8700 Buy Now
Future Electronics IGBT Transistors High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube 0
Tube
  • 450 $4.2400
  • 900 $4.1700
  • 1,350 $4.1000
$4.1000 / $4.2400 Buy Now
Quest Components   360
  • 1 $8.3490
  • 46 $5.1486
  • 195 $4.5920
$4.5920 / $8.3490 Buy Now
DISTI # RGW00TS65DHRC11
Avnet Americas Transistor IGBT Chip 650V 96A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGW00TS65DHRC11) Min Qty: 450 Package Multiple: 450 Lead time: 22 Weeks, 0 Days Container: Tube 0
  • 450 $4.8455
  • 900 $4.7473
  • 1,800 $4.6491
  • 2,700 $4.5509
  • 3,600 $4.4526
  • 4,500 $4.3544
  • 45,000 $4.2562
$4.2562 / $4.8455 Buy Now
Ameya Holding Limited   Min Qty: 1 30-Authorized Distributor
  • 1 $8.2500
  • 10 $7.4600
  • 30 $7.1100
  • 120 $6.1700
  • 450 $5.9520
$5.9520 / $8.2500 Buy Now
DISTI # RGW00TS65DHRC11
Avnet Americas Transistor IGBT Chip 650V 96A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGW00TS65DHRC11) Min Qty: 450 Package Multiple: 450 Lead time: 22 Weeks, 0 Days Container: Tube 0
  • 450 $4.8455
  • 900 $4.7473
  • 1,800 $4.6491
  • 2,700 $4.5509
  • 3,600 $4.4526
  • 4,500 $4.3544
  • 45,000 $4.2562
$4.2562 / $4.8455 Buy Now

Part Details for RGW00TS65DHRC11

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RGW00TS65DHRC11 Part Data Attributes

RGW00TS65DHRC11 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RGW00TS65DHRC11 ROHM Semiconductor Insulated Gate Bipolar Transistor, 96A I(C), 650V V(BR)CES, N-Channel, TO-247,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Reach Compliance Code compliant
Factory Lead Time 22 Weeks
Samacsys Manufacturer ROHM Semiconductor
Collector Current-Max (IC) 96 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 30 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 254 W
Reference Standard AEC-Q101
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 294 ns
Turn-on Time-Nom (ton) 60 ns
VCEsat-Max 1.9 V

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