Datasheets
RGW00TS65GC11 by: ROHM Semiconductor

Insulated Gate Bipolar Transistor, 96A I(C), 650V V(BR)CES, N-Channel, TO-247, TO-247N, 3 PIN

Part Details for RGW00TS65GC11 by ROHM Semiconductor

Overview of RGW00TS65GC11 by ROHM Semiconductor

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Price & Stock for RGW00TS65GC11

Part # Distributor Description Stock Price Buy
DISTI # RGW00TS65GC11-ND
DigiKey IGBT TRNCH FIELD 650V 96A TO247N Min Qty: 1 Lead time: 22 Weeks Container: Tube Limited Supply - Call
  • 1 $5.7800
  • 30 $4.5813
  • 120 $3.9269
  • 510 $3.4906
  • 1,020 $2.9888
  • 2,010 $2.8143
$2.8143 / $5.7800 Buy Now
DISTI # RGW00TS65GC11
Avnet Americas Trans IGBT Chip N-CH 650V 96A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGW00TS65GC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $3.1968
  • 900 $3.1320
  • 1,800 $3.0672
  • 2,700 $3.0024
  • 3,600 $2.9376
  • 4,500 $2.8728
  • 45,000 $2.8080
$2.8080 / $3.1968 Buy Now
DISTI # 755-RGW00TS65GC11
Mouser Electronics IGBT Transistors 650V 50A TO-247N Field Stp Trnch IGBT RoHS: Compliant 385
  • 1 $5.9000
  • 25 $4.9600
  • 100 $4.0100
  • 450 $3.4100
  • 900 $2.8100
$2.8100 / $5.9000 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube 0
Tube
  • 450 $2.8800
$2.8800 Buy Now
DISTI # RGW00TS65GC11
Avnet Americas Trans IGBT Chip N-CH 650V 96A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGW00TS65GC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $3.1968
  • 900 $3.1320
  • 1,800 $3.0672
  • 2,700 $3.0024
  • 3,600 $2.9376
  • 4,500 $2.8728
  • 45,000 $2.8080
$2.8080 / $3.1968 Buy Now
DISTI # RGW00TS65GC11
Avnet Americas Trans IGBT Chip N-CH 650V 96A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGW00TS65GC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $3.1968
  • 900 $3.1320
  • 1,800 $3.0672
  • 2,700 $3.0024
  • 3,600 $2.9376
  • 4,500 $2.8728
  • 45,000 $2.8080
$2.8080 / $3.1968 Buy Now
DISTI # IGBT2572
Rutronik IGBT 650V 50A 1,5V TO-247N RoHS: Compliant Min Qty: 30 Package Multiple: 30 Container: Tube Stock DE - 450
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 30 $4.4800
  • 60 $4.0300
  • 90 $3.9100
  • 150 $3.8100
  • 240 $3.4100
$3.4100 / $4.4800 Buy Now

Part Details for RGW00TS65GC11

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RGW00TS65GC11 Part Data Attributes

RGW00TS65GC11 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RGW00TS65GC11 ROHM Semiconductor Insulated Gate Bipolar Transistor, 96A I(C), 650V V(BR)CES, N-Channel, TO-247, TO-247N, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2018-11-20
Samacsys Manufacturer ROHM Semiconductor
Collector Current-Max (IC) 96 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 273 ns
Turn-on Time-Nom (ton) 72 ns

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