Datasheets
RGW80TS65DGC11 by: ROHM Semiconductor

Insulated Gate Bipolar Transistor, 78A I(C), 650V V(BR)CES, N-Channel, TO-247, TO-247N, 3 PIN

Part Details for RGW80TS65DGC11 by ROHM Semiconductor

Overview of RGW80TS65DGC11 by ROHM Semiconductor

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Price & Stock for RGW80TS65DGC11

Part # Distributor Description Stock Price Buy
DISTI # RGW80TS65DGC11-ND
DigiKey IGBT TRNCH FIELD 650V 78A TO247N Min Qty: 1 Lead time: 22 Weeks Container: Tube 314
In Stock
  • 1 $6.2300
  • 30 $4.9377
  • 120 $4.2323
  • 510 $3.7620
  • 1,020 $3.2212
  • 2,010 $3.0332
$3.0332 / $6.2300 Buy Now
DISTI # RGW80TS65DGC11
Avnet Americas Trans IGBT Chip N-CH 650V 78A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGW80TS65DGC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $3.4454
  • 900 $3.3756
  • 1,800 $3.3058
  • 2,700 $3.2359
  • 3,600 $3.1661
  • 4,500 $3.0962
  • 45,000 $3.0264
$3.0264 / $3.4454 Buy Now
DISTI # 755-RGW80TS65DGC11
Mouser Electronics IGBT Transistors 650V 40A TO-247N Field Stp Trnch IGBT RoHS: Compliant 418
  • 1 $6.2200
  • 10 $5.2300
  • 25 $4.9100
  • 100 $4.2300
  • 250 $3.9900
  • 450 $3.7100
  • 900 $3.0300
$3.0300 / $6.2200 Buy Now
Future Electronics IGBT Transistors 650V 40A TO-247N Field Stp Trnch IGBT RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 30
Tube
  • 1 $3.4400
  • 25 $3.3100
  • 100 $3.2100
  • 250 $3.1400
  • 1,000 $2.9800
$2.9800 / $3.4400 Buy Now
Quest Components   1440
  • 1 $5.8740
  • 277 $3.2307
  • 620 $2.9370
$2.9370 / $5.8740 Buy Now
DISTI # RGW80TS65DGC11
Avnet Americas Trans IGBT Chip N-CH 650V 78A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGW80TS65DGC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $3.4454
  • 900 $3.3756
  • 1,800 $3.3058
  • 2,700 $3.2359
  • 3,600 $3.1661
  • 4,500 $3.0962
  • 45,000 $3.0264
$3.0264 / $3.4454 Buy Now
DISTI # RGW80TS65DGC11
TME Transistor: IGBT, 650V, 40A, 107W, TO247-3 Min Qty: 1 0
  • 1 $5.0900
  • 5 $4.5800
  • 30 $4.0500
  • 90 $3.6300
  • 450 $3.2900
$3.2900 / $5.0900 RFQ
DISTI # RGW80TS65DGC11
Avnet Americas Trans IGBT Chip N-CH 650V 78A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGW80TS65DGC11) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $3.4454
  • 900 $3.3756
  • 1,800 $3.3058
  • 2,700 $3.2359
  • 3,600 $3.1661
  • 4,500 $3.0962
  • 45,000 $3.0264
$3.0264 / $3.4454 Buy Now

Part Details for RGW80TS65DGC11

RGW80TS65DGC11 CAD Models

RGW80TS65DGC11 Part Data Attributes

RGW80TS65DGC11 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RGW80TS65DGC11 ROHM Semiconductor Insulated Gate Bipolar Transistor, 78A I(C), 650V V(BR)CES, N-Channel, TO-247, TO-247N, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2018-11-20
Samacsys Manufacturer ROHM Semiconductor
Collector Current-Max (IC) 78 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 228 ns
Turn-on Time-Nom (ton) 59 ns

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