Datasheets
RGWS60TS65DGC13 by: ROHM Semiconductor

Insulated Gate Bipolar Transistor, 51A I(C), 650V V(BR)CES, N-Channel, TO-247, TO-247GE, 3 PIN

Part Details for RGWS60TS65DGC13 by ROHM Semiconductor

Overview of RGWS60TS65DGC13 by ROHM Semiconductor

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Price & Stock for RGWS60TS65DGC13

Part # Distributor Description Stock Price Buy
DISTI # 846-RGWS60TS65DGC13-ND
DigiKey IGBT TRNCH FIELD 650V 51A TO247G Min Qty: 1 Lead time: 22 Weeks Container: Tube 600
In Stock
  • 1 $5.6200
  • 30 $4.4500
  • 120 $3.8142
  • 510 $3.3904
  • 1,020 $2.9030
  • 2,010 $2.7335
$2.7335 / $5.6200 Buy Now
DISTI # RGWS60TS65DGC13
Avnet Americas Transistor IGBT Chip N-Channel 650V 51A 3-Pin TO-247GE Tube - Rail/Tube (Alt: RGWS60TS65DGC13) RoHS: Not Compliant Min Qty: 600 Package Multiple: 600 Lead time: 22 Weeks, 0 Days Container: Tube 0
  • 600 $3.1050
  • 1,200 $3.0421
  • 2,400 $2.9792
  • 3,600 $2.9162
  • 4,800 $2.8533
  • 6,000 $2.7903
  • 60,000 $2.7274
$2.7274 / $3.1050 Buy Now
DISTI # 755-RGWS60TS65DGC13
Mouser Electronics IGBT Transistors TO247GE 650V TRNCH 30A RoHS: Compliant 2394
  • 1 $5.6200
  • 10 $4.7200
$4.7200 / $5.6200 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Container: Tube 0
Tube
  • 600 $2.8000
$2.8000 Buy Now
DISTI # 69068707
Verical Trans IGBT Chip N-CH 650V 51A 156W 3-Pin(3+Tab) TO-247N Tube Min Qty: 17 Package Multiple: 1 Date Code: 2243 Americas - 111
  • 17 $1.9125
  • 50 $1.7000
  • 100 $1.6375
$1.6375 / $1.9125 Buy Now
DISTI # 65758815
Verical Trans IGBT Chip N-CH 650V 51A 156W 3-Pin(3+Tab) TO-247N Tube Min Qty: 27 Package Multiple: 1 Date Code: 2201 Americas - 109
  • 27 $2.7973
  • 50 $2.6907
  • 100 $2.5994
$2.5994 / $2.7973 Buy Now
Quest Components   87
  • 1 $4.9800
  • 22 $3.3200
  • 76 $3.0710
$3.0710 / $4.9800 Buy Now
DISTI # RGWS60TS65DGC13
TTI IGBT Transistors TO247GE 650V TRNCH 30A RoHS: Compliant pbFree: Pb-Free Min Qty: 600 Package Multiple: 600 Container: Tube Americas - 0
  • 600 $3.1800
$3.1800 Buy Now
DISTI # RGWS60TS65DGC13
Avnet Americas Transistor IGBT Chip N-Channel 650V 51A 3-Pin TO-247GE Tube - Rail/Tube (Alt: RGWS60TS65DGC13) RoHS: Not Compliant Min Qty: 600 Package Multiple: 600 Lead time: 22 Weeks, 0 Days Container: Tube 0
  • 600 $3.1050
  • 1,200 $3.0421
  • 2,400 $2.9792
  • 3,600 $2.9162
  • 4,800 $2.8533
  • 6,000 $2.7903
  • 60,000 $2.7274
$2.7274 / $3.1050 Buy Now
DISTI # C1S625902047940
Chip1Stop IGBT discrete RoHS: Compliant pbFree: No Container: Tube 111
  • 1 $1.8900
  • 10 $1.5300
  • 50 $1.3600
  • 100 $1.3100
$1.3100 / $1.8900 Buy Now
CHIPMALL.COM LIMITED HIGH-SPEED FAST SWITCHING TYPE, 109
  • 10 $3.3803
  • 100 $2.6089
$2.6089 / $3.3803 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 109
  • 1 $8.1800
  • 10 $2.2920
  • 30 $1.8560
  • 50 $1.7690
  • 100 $1.7030
  • 300 $1.6600
$1.6600 / $8.1800 Buy Now

Part Details for RGWS60TS65DGC13

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RGWS60TS65DGC13 Part Data Attributes:

RGWS60TS65DGC13 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RGWS60TS65DGC13 ROHM Semiconductor Insulated Gate Bipolar Transistor, 51A I(C), 650V V(BR)CES, N-Channel, TO-247, TO-247GE, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description TO-247GE, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 22 Weeks
Collector Current-Max (IC) 51 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 30 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 156 W
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 175 ns
Turn-on Time-Nom (ton) 44 ns
VCEsat-Max 2 V

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