Part Details for RGWS80TS65DGC13 by ROHM Semiconductor
Overview of RGWS80TS65DGC13 by ROHM Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Automotive
Price & Stock for RGWS80TS65DGC13
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
846-RGWS80TS65DGC13-ND
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DigiKey | IGBT TRENCH FS 650V 71A TO247G Min Qty: 1 Lead time: 22 Weeks Container: Tube |
600 In Stock |
|
$3.0227 / $6.2100 | Buy Now |
|
DISTI #
RGWS80TS65DGC13
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Avnet Americas | Transistor IGBT Chip N-Channel 650V 71A 3-Pin TO-247GE Tube - Rail/Tube (Alt: RGWS80TS65DGC13) Min Qty: 600 Package Multiple: 600 Lead time: 22 Weeks, 0 Days Container: Tube | 0 |
|
$3.0160 / $3.4336 | Buy Now |
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DISTI #
755-RGWS80TS65DGC13
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Mouser Electronics | IGBT Transistors TO247GE 650V TRNCH 40A RoHS: Compliant | 2400 |
|
$3.0200 / $6.2100 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 600 Container: Tube | 0Tube |
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$3.1000 | Buy Now |
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|
Quest Components | 96 |
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$3.0895 / $5.0100 | Buy Now | |
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DISTI #
RGWS80TS65DGC13
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TTI | IGBT Transistors TO247GE 650V TRNCH 40A RoHS: Compliant pbFree: Pb-Free Min Qty: 600 Package Multiple: 600 Container: Tube | Americas - 0 |
|
$3.5200 | Buy Now |
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DISTI #
RGWS80TS65DGC13
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Avnet Americas | Transistor IGBT Chip N-Channel 650V 71A 3-Pin TO-247GE Tube - Rail/Tube (Alt: RGWS80TS65DGC13) Min Qty: 600 Package Multiple: 600 Lead time: 22 Weeks, 0 Days Container: Tube | 0 |
|
$3.0160 / $3.4336 | Buy Now |
|
DISTI #
RGWS80TS65DGC13
|
Avnet Americas | Transistor IGBT Chip N-Channel 650V 71A 3-Pin TO-247GE Tube - Rail/Tube (Alt: RGWS80TS65DGC13) Min Qty: 600 Package Multiple: 600 Lead time: 22 Weeks, 0 Days Container: Tube | 0 |
|
$3.0160 / $3.4336 | Buy Now |
|
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CHIPMALL.COM LIMITED | HIGH-SPEED FAST SWITCHING TYPE, | 120 |
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$2.6089 / $3.3125 | Buy Now |
Part Details for RGWS80TS65DGC13
RGWS80TS65DGC13 CAD Models
RGWS80TS65DGC13 Part Data Attributes
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RGWS80TS65DGC13
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RGWS80TS65DGC13
ROHM Semiconductor
Insulated Gate Bipolar Transistor, 71A I(C), 650V V(BR)CES, N-Channel, TO-247, TO-247GE, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | TO-247GE, 3 PIN | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 22 Weeks | |
| Collector Current-Max (IC) | 71 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 30 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 202 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 201 ns | |
| Turn-on Time-Nom (ton) | 56 ns | |
| VCEsat-Max | 2 V |