Part Details for RJK0346DPA-00-J0 by Renesas Electronics Corporation
Overview of RJK0346DPA-00-J0 by Renesas Electronics Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for RJK0346DPA-00-J0
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 65A I(D), 30V, 0.0027OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET (Also Known As: RJK0346DPA-00#J0) | 52 |
|
$1.3500 / $3.6000 | Buy Now |
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 65A I(D), 30V, 0.0027OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 52 |
|
$1.3500 / $3.6000 | Buy Now |
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 65A I(D), 30V, 0.0027OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2000 |
|
$4.5180 / $9.0360 | Buy Now |
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 65A I(D), 30V, 0.0027OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET (Also Known As: RJK0346DPA-00#J0) | 2000 |
|
$4.5180 / $9.0360 | Buy Now |
Part Details for RJK0346DPA-00-J0
RJK0346DPA-00-J0 CAD Models
RJK0346DPA-00-J0 Part Data Attributes
|
RJK0346DPA-00-J0
Renesas Electronics Corporation
Buy Now
Datasheet
|
Compare Parts:
RJK0346DPA-00-J0
Renesas Electronics Corporation
65A, 30V, 0.0027ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, WPAK-8
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Package Description | SMALL OUTLINE, R-XDSO-N5 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 65 A | |
Drain-source On Resistance-Max | 0.0027 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-N5 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 65 W | |
Pulsed Drain Current-Max (IDM) | 260 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |