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IGBT for Inverter Applications, TO-3PFM, /Tube
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
RJP60V0DPM-80#T2 | Renesas Electronics Corporation | IGBT for Inverter Applications, TO-3PF, /Tube | |
RJP60V0DPM-00#T1 | Renesas Electronics Corporation | IGBT for Inverter Applications, TO-3PFM, /Tube |
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RJP60V0DPM-00#T1-ND
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DigiKey | IGBT TRENCH 600V 45A TO3PFM Min Qty: 1 Lead time: 30 Weeks Container: Tube |
8 In Stock |
|
$2.4500 | Buy Now |
|
Renesas Electronics America | IGBT TRENCH 600V 45A TO3PFM Min Qty: 1 Container: Tube | 8 |
|
$2.4500 | Buy Now |
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RJP60V0DPM-00#T1
Renesas Electronics Corporation
Buy Now
Datasheet
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RJP60V0DPM-00#T1
Renesas Electronics Corporation
IGBT for Inverter Applications, TO-3PFM, /Tube
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | TO-3PFM | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Manufacturer Package Code | PRSS0003ZA | |
Reach Compliance Code | compliant | |
ECCN Code | 5A002 | |
Samacsys Manufacturer | Renesas Electronics | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 45 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 7.5 V | |
Gate-Emitter Voltage-Max | 30 V | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 170 ns | |
Turn-on Time-Nom (ton) | 85 ns |