Part Details for RN1101(T5L,F,T) by Toshiba America Electronic Components
Overview of RN1101(T5L,F,T) by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Smart Cities
Price & Stock for RN1101(T5L,F,T)
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
757-RN1101T5LFT
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Mouser Electronics | Digital Transistors BRT NPN Single 100mA IC 50V VCEO RoHS: Compliant | 0 |
|
$0.0220 / $0.2000 | Order Now |
Part Details for RN1101(T5L,F,T)
RN1101(T5L,F,T) CAD Models
RN1101(T5L,F,T) Part Data Attributes
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RN1101(T5L,F,T)
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
RN1101(T5L,F,T)
Toshiba America Electronic Components
Small Signal Bipolar Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Samacsys Manufacturer | Toshiba | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Base Capacitance-Max | 6 pF | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 30 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 0.1 W | |
| Power Dissipation-Max (Abs) | 0.1 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| VCEsat-Max | 0.3 V |