Part Details for RN1101FV by Toshiba America Electronic Components
Overview of RN1101FV by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for RN1101FV
RN1101FV CAD Models
RN1101FV Part Data Attributes:
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RN1101FV
Toshiba America Electronic Components
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Datasheet
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RN1101FV
Toshiba America Electronic Components
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SMALL OUTLINE, R-PDSO-F3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | BUILT-IN BIAS RESISTANCE RATIO IS 1 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 30 | |
JESD-30 Code | R-PDSO-F3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.15 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 250 MHz |
Alternate Parts for RN1101FV
This table gives cross-reference parts and alternative options found for RN1101FV. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RN1101FV, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RN1117MFV(TL3PAV) | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | Toshiba America Electronic Components | RN1101FV vs RN1117MFV(TL3PAV) |
DTC143XL-AL3-R | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | RN1101FV vs DTC143XL-AL3-R |
KSR1005J05Z | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | Fairchild Semiconductor Corporation | RN1101FV vs KSR1005J05Z |
DTC114GAAC2 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ATR, 3 PIN | ROHM Semiconductor | RN1101FV vs DTC114GAAC2 |
RN1103FV | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal | Toshiba America Electronic Components | RN1101FV vs RN1103FV |
RN1317(T5L,PP,F) | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | Toshiba America Electronic Components | RN1101FV vs RN1317(T5L,PP,F) |
KSR1002BU | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Fairchild Semiconductor Corporation | RN1101FV vs KSR1002BU |
DTC143XFAC1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTR, 3 PIN | ROHM Semiconductor | RN1101FV vs DTC143XFAC1 |
DDTC143XKA-13 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-59, 3 PIN | Diodes Incorporated | RN1101FV vs DDTC143XKA-13 |
TDTC143E | Small Signal Bipolar Transistor | Toshiba America Electronic Components | RN1101FV vs TDTC143E |