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TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, MINI, 2-4E1A, 3 PIN, BIP General Purpose Small Signal
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | 960 |
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RFQ |
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RN1202
Toshiba America Electronic Components
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Datasheet
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RN1202
Toshiba America Electronic Components
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, MINI, 2-4E1A, 3 PIN, BIP General Purpose Small Signal
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Base Capacitance-Max | 6 pF | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 50 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 250 MHz | |
VCEsat-Max | 0.3 V |
This table gives cross-reference parts and alternative options found for RN1202. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RN1202, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FJNS4202R | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S, 3 PIN | Fairchild Semiconductor Corporation | RN1202 vs FJNS4202R |
DTA114ESA | Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SPT, 3 PIN | ROHM Semiconductor | RN1202 vs DTA114ESA |
DMA56406 | Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, 6 PIN | Panasonic Electronic Components | RN1202 vs DMA56406 |
KRA301 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, USM, 3 PIN | KEC | RN1202 vs KRA301 |
RN2301(TE85L2) | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal | Toshiba America Electronic Components | RN1202 vs RN2301(TE85L2) |
BRC144EMP | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, MPAK-3 | Renesas Electronics Corporation | RN1202 vs BRC144EMP |
DTA114ESA | Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, PNP, Silicon | Jiangsu Changjiang Electronics Technology Co Ltd | RN1202 vs DTA114ESA |
KSR2105TI | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN | Samsung Semiconductor | RN1202 vs KSR2105TI |
RN1301(TE85L,F) | TRANSISTOR NPN 50V 0.1A SC-70 | Toshiba America Electronic Components | RN1202 vs RN1301(TE85L,F) |
UN211N | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN | Panasonic Electronic Components | RN1202 vs UN211N |