Part Details for RN1302,LF(T by Toshiba America Electronic Components
Overview of RN1302,LF(T by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for RN1302,LF(T
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
09AK7349
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Newark | Rf Transistor, 50V, 0.1A, Sot-323, Transistor Polarity:Single Npn, Collector Emitter Voltage Max Npn:50V, Collector Emitter Voltage Max Pnp:-, Continuous Collector Current:100Ma, Base Input Resistor R1:10Kohm, No. Of Pins:3 Pin Rohs Compliant: Yes |Toshiba RN1302,LF(T RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 50995 |
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$0.0280 / $0.1940 | Buy Now |
DISTI #
C1S751201106065
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Chip1Stop | Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RoHS: Compliant pbFree: Yes Container: Cut Tape | 120 |
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$0.0270 | Buy Now |
DISTI #
RN1302,LF(T
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EBV Elektronik | Transistor Digital BJT NPN 100mA 3-Pin SOT-323 (Alt: RN1302,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for RN1302,LF(T
RN1302,LF(T CAD Models
RN1302,LF(T Part Data Attributes
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RN1302,LF(T
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
RN1302,LF(T
Toshiba America Electronic Components
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.75 | |
Samacsys Manufacturer | Toshiba | |
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Base Capacitance-Max | 6 pF | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 50 | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 0.1 W | |
Power Dissipation-Max (Abs) | 0.1 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 250 MHz | |
VCEsat-Max | 0.3 V |