Part Details for RN1408,LF by Toshiba America Electronic Components
Overview of RN1408,LF by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for RN1408,LF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RN1408LFCT-ND
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DigiKey | TRANS PREBIAS NPN 50V 0.1A SMINI Min Qty: 1 Lead time: 40 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2240 In Stock |
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$0.0169 / $0.1600 | Buy Now |
DISTI #
RN1408,LF
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Avnet Americas | X34 PB-F S-MINI PLN (LF) TRANSISTOR PD=200MW F=1MHZ - Tape and Reel (Alt: RN1408,LF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.0166 / $0.0199 | Buy Now |
DISTI #
757-RN1408LF
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Mouser Electronics | Digital Transistors Bias Resistor Built-in transistor RoHS: Compliant | 2409 |
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$0.0170 / $0.1600 | Buy Now |
Part Details for RN1408,LF
RN1408,LF CAD Models
RN1408,LF Part Data Attributes
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RN1408,LF
Toshiba America Electronic Components
Buy Now
Datasheet
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RN1408,LF
Toshiba America Electronic Components
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Reach Compliance Code | unknown | |
Samacsys Manufacturer | Toshiba | |
Additional Feature | BUILT-IN BIAS RESISTANCE RATIO IS 2.14 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Base Capacitance-Max | 6 pF | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 80 | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 0.2 W | |
Power Dissipation-Max (Abs) | 0.2 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 250 MHz | |
VCEsat-Max | 0.3 V |