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Part Details for RQ3E180AJTB by ROHM Semiconductor
Overview of RQ3E180AJTB by ROHM Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RQ3E180AJTB
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RQ3E180AJTBCT-ND
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DigiKey | MOSFET N-CH 30V 18A/30A 8HSMT Min Qty: 1 Lead time: 21 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
16317 In Stock |
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$0.4183 / $1.1100 | Buy Now |
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DISTI #
RQ3E180AJTB
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Avnet Americas | Trans MOSFET N-CH 30V ±30A 8-Pin HSMT Emboss T/R - Tape and Reel (Alt: RQ3E180AJTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.4275 / $0.4876 | Buy Now |
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DISTI #
755-RQ3E180AJTB
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Mouser Electronics | MOSFET Nch 30V 18A Middle Power MOSFET RoHS: Compliant | 6027 |
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$0.4180 / $1.1100 | Buy Now |
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Future Electronics | MOSFET Nch 30V 18A Middle Power MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.4460 | Buy Now |
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Quest Components | 1803 |
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$0.5548 / $1.5850 | Buy Now | |
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DISTI #
RQ3E180AJTB
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Avnet Americas | Trans MOSFET N-CH 30V ±30A 8-Pin HSMT Emboss T/R - Tape and Reel (Alt: RQ3E180AJTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.4275 / $0.4876 | Buy Now |
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DISTI #
RQ3E180AJTB
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TME | Transistor: N-MOSFET, unipolar, 30V, 30A, Idm: 72A, 30W, HSMT8 Min Qty: 1 | 3000 |
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$0.4080 / $0.9670 | Buy Now |
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DISTI #
RQ3E180AJTB
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Avnet Americas | Trans MOSFET N-CH 30V ±30A 8-Pin HSMT Emboss T/R - Tape and Reel (Alt: RQ3E180AJTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.4275 / $0.4876 | Buy Now |
Part Details for RQ3E180AJTB
RQ3E180AJTB CAD Models
RQ3E180AJTB Part Data Attributes
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RQ3E180AJTB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RQ3E180AJTB
ROHM Semiconductor
Power Field-Effect Transistor, 18A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HSMT8, 8 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | HSMT8, 8 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Avalanche Energy Rating (Eas) | 24.6 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.0058 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RQ3E180AJTB
This table gives cross-reference parts and alternative options found for RQ3E180AJTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RQ3E180AJTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NTMFS4985NFT3G | Single N-Channel Power MOSFET 30V, 65A, 3.4mΩ, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL | onsemi | RQ3E180AJTB vs NTMFS4985NFT3G |
| FDS7068SN3 | Power Field-Effect Transistor, 19A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | RQ3E180AJTB vs FDS7068SN3 |
| BSC043N03MSCGATMA1 | Power Field-Effect Transistor, 17A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | RQ3E180AJTB vs BSC043N03MSCGATMA1 |
| QM3006D | Power Field-Effect Transistor, 17A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | UPI Semiconductor Corp | RQ3E180AJTB vs QM3006D |
| BSZ0904NSI | Power Field-Effect Transistor, 18A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | RQ3E180AJTB vs BSZ0904NSI |
| BSZ0589NSATMA1 | Power Field-Effect Transistor, 17A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8 | Infineon Technologies AG | RQ3E180AJTB vs BSZ0589NSATMA1 |
| NTTFS4985NFTWG | 16.3A, 30V, 0.0052ohm, N-CHANNEL, Si, POWER, MOSFET, 3.30 X 3.30 MM, ROHS COMPLIANT, CASE 511AB, WDFN-8 | onsemi | RQ3E180AJTB vs NTTFS4985NFTWG |
| FDMS8672S | Power Field-Effect Transistor, 17A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN | Fairchild Semiconductor Corporation | RQ3E180AJTB vs FDMS8672S |
| NTTFS4985NFTAG | Single N-Channel Power MOSFET 30V, 64A, 3.5mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL | onsemi | RQ3E180AJTB vs NTTFS4985NFTAG |
| NTMFS4985NFT1G | Single N-Channel Power MOSFET 30V, 65A, 3.4mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL | onsemi | RQ3E180AJTB vs NTMFS4985NFT1G |