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MOSFET N-CH 30V 5.5A TSMT
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RQ6E055BNTCRCT-ND
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DigiKey | MOSFET N-CH 30V 5.5A TSMT6 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2970 In Stock |
|
$0.2062 / $0.6200 | Buy Now |
DISTI #
RQ6E055BNTCR
|
Avnet Americas | N-Channel Power MOSFET 30V Drain-Source Voltage ±5.5A Continuous Drain Current 1.25W - Tape and Reel (Alt: RQ6E055BNTCR) Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.2392 / $0.3053 | Buy Now |
DISTI #
755-RQ6E055BNTCR
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Mouser Electronics | MOSFET NCH 30V 5.5A POWER MOSFET RoHS: Compliant | 3000 |
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$0.2060 / $0.6200 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2200 | Buy Now |
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Quest Components | 408 |
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$0.3400 / $0.6800 | Buy Now | |
DISTI #
RQ6E055BNTCR
|
TTI | MOSFET NCH 30V 5.5A POWER MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.2060 / $0.2370 | Buy Now |
DISTI #
RQ6E055BNTCR
|
Avnet Americas | N-Channel Power MOSFET 30V Drain-Source Voltage ±5.5A Continuous Drain Current 1.25W - Tape and Reel (Alt: RQ6E055BNTCR) Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.2392 / $0.3053 | Buy Now |
DISTI #
RQ6E055BNTCR
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TME | Transistor: N-MOSFET, unipolar, 30V, 5.5A, Idm: 18A, 1.25W, TSMT6 Min Qty: 3 | 0 |
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$0.1260 / $0.2870 | RFQ |
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Ameya Holding Limited | MOSFET N-CH 30V 5.5A TSMT Min Qty: 1 | 100-Authorized Distributor |
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$0.1600 / $0.4800 | Buy Now |
DISTI #
RQ6E055BNTCR
|
Avnet Americas | N-Channel Power MOSFET 30V Drain-Source Voltage ±5.5A Continuous Drain Current 1.25W - Tape and Reel (Alt: RQ6E055BNTCR) Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.2392 / $0.3053 | Buy Now |
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|
RQ6E055BNTCR
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RQ6E055BNTCR
ROHM Semiconductor
MOSFET N-CH 30V 5.5A TSMT
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 2.2 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 0.039 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.25 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |