Datasheets
RQ6E055BNTCR by: ROHM Semiconductor

MOSFET N-CH 30V 5.5A TSMT

Part Details for RQ6E055BNTCR by ROHM Semiconductor

Overview of RQ6E055BNTCR by ROHM Semiconductor

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for RQ6E055BNTCR

Part # Distributor Description Stock Price Buy
DISTI # RQ6E055BNTCRCT-ND
DigiKey MOSFET N-CH 30V 5.5A TSMT6 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2970
In Stock
  • 1 $0.6200
  • 10 $0.5420
  • 100 $0.3750
  • 500 $0.3133
  • 1,000 $0.2666
  • 3,000 $0.2375
  • 6,000 $0.2250
  • 9,000 $0.2083
  • 30,000 $0.2062
$0.2062 / $0.6200 Buy Now
DISTI # RQ6E055BNTCR
Avnet Americas N-Channel Power MOSFET 30V Drain-Source Voltage ±5.5A Continuous Drain Current 1.25W - Tape and Reel (Alt: RQ6E055BNTCR) Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
  • 3,000 $0.3053
  • 6,000 $0.2888
  • 12,000 $0.2722
  • 18,000 $0.2557
  • 24,000 $0.2392
$0.2392 / $0.3053 Buy Now
DISTI # 755-RQ6E055BNTCR
Mouser Electronics MOSFET NCH 30V 5.5A POWER MOSFET RoHS: Compliant 3000
  • 1 $0.6200
  • 10 $0.5420
  • 100 $0.3750
  • 500 $0.3140
  • 1,000 $0.2670
  • 3,000 $0.2470
  • 6,000 $0.2240
  • 9,000 $0.2080
  • 24,000 $0.2060
$0.2060 / $0.6200 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.2200
$0.2200 Buy Now
Quest Components   408
  • 1 $0.6800
  • 38 $0.4080
  • 148 $0.3400
$0.3400 / $0.6800 Buy Now
DISTI # RQ6E055BNTCR
TTI MOSFET NCH 30V 5.5A POWER MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.2370
  • 6,000 $0.2200
  • 9,000 $0.2150
  • 18,000 $0.2100
  • 30,000 $0.2060
$0.2060 / $0.2370 Buy Now
DISTI # RQ6E055BNTCR
Avnet Americas N-Channel Power MOSFET 30V Drain-Source Voltage ±5.5A Continuous Drain Current 1.25W - Tape and Reel (Alt: RQ6E055BNTCR) Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
  • 3,000 $0.3053
  • 6,000 $0.2888
  • 12,000 $0.2722
  • 18,000 $0.2557
  • 24,000 $0.2392
$0.2392 / $0.3053 Buy Now
DISTI # RQ6E055BNTCR
TME Transistor: N-MOSFET, unipolar, 30V, 5.5A, Idm: 18A, 1.25W, TSMT6 Min Qty: 3 0
  • 3 $0.2870
  • 25 $0.1890
  • 100 $0.1490
  • 500 $0.1340
  • 3,000 $0.1260
$0.1260 / $0.2870 RFQ
Ameya Holding Limited MOSFET N-CH 30V 5.5A TSMT Min Qty: 1 100-Authorized Distributor
  • 1 $0.4800
  • 10 $0.3970
  • 25 $0.3195
  • 100 $0.2420
  • 250 $0.2283
  • 500 $0.2145
  • 1,000 $0.1870
  • 3,000 $0.1600
$0.1600 / $0.4800 Buy Now
DISTI # RQ6E055BNTCR
Avnet Americas N-Channel Power MOSFET 30V Drain-Source Voltage ±5.5A Continuous Drain Current 1.25W - Tape and Reel (Alt: RQ6E055BNTCR) Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
  • 3,000 $0.3053
  • 6,000 $0.2888
  • 12,000 $0.2722
  • 18,000 $0.2557
  • 24,000 $0.2392
$0.2392 / $0.3053 Buy Now
DISTI # RQ6E055BNTCR
Avnet Asia N-Channel Power MOSFET 30V Drain-Source Voltage ±5.5A Continuous Drain Current 1.25W (Alt: RQ6E055BNTCR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days 0
RFQ
CHIPMALL.COM LIMITED MOSFET N-CH 30V 5.5A TSMT6 510
  • 100 $0.2788
  • 500 $0.2140
$0.2140 / $0.2788 Buy Now

Part Details for RQ6E055BNTCR

RQ6E055BNTCR CAD Models

RQ6E055BNTCR Part Data Attributes

RQ6E055BNTCR ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RQ6E055BNTCR ROHM Semiconductor MOSFET N-CH 30V 5.5A TSMT
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 2.2 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.039 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.25 W
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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