Part Details for RTQ025P02FRATR by ROHM Semiconductor
Overview of RTQ025P02FRATR by ROHM Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for RTQ025P02FRATR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RTQ025P02FRATR
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TME | Transistor: P-MOSFET, unipolar, -20V, -2.5A, Idm: -10A, 1.25W, TSMT6 Min Qty: 3 | 0 |
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$0.1790 / $0.2940 | RFQ |
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DISTI #
RTQ025P02FRATR
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Avnet Silica | (Alt: RTQ025P02FRATR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 23 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for RTQ025P02FRATR
RTQ025P02FRATR CAD Models
RTQ025P02FRATR Part Data Attributes
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RTQ025P02FRATR
ROHM Semiconductor
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Datasheet
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RTQ025P02FRATR
ROHM Semiconductor
Power Field-Effect Transistor, 2.5A I(D), 20V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |