Datasheets
RX1L08BGNC10 by: ROHM Semiconductor

Power Field-Effect Transistor,

Part Details for RX1L08BGNC10 by ROHM Semiconductor

Overview of RX1L08BGNC10 by ROHM Semiconductor

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Applications Industrial Automation Healthcare Renewable Energy Robotics and Drones

Price & Stock for RX1L08BGNC10

Part # Distributor Description Stock Price Buy
Quest Components   40
  • 1 $3.4440
  • 11 $2.1525
  • 36 $1.8942
$1.8942 / $3.4440 Buy Now

Part Details for RX1L08BGNC10

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RX1L08BGNC10 Part Data Attributes

RX1L08BGNC10 ROHM Semiconductor
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RX1L08BGNC10 ROHM Semiconductor Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ROHM CO LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2017-10-18
Avalanche Energy Rating (Eas) 52 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0072 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 160 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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