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Power Field-Effect Transistor, 70A I(D), 40V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
91AH8990
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Newark | Mosfet, N-Ch, 40V, 70A, To-220Ab Rohs Compliant: Yes |Rohm RX3G07CGNC16 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$1.0700 / $2.4800 | Buy Now |
DISTI #
846-RX3G07CGNC16-ND
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DigiKey | MOSFET N-CH 40V 70A TO220AB Min Qty: 1 Lead time: 21 Weeks Container: Tube | Temporarily Out of Stock |
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$0.9988 / $2.3800 | Buy Now |
DISTI #
RX3G07CGNC16
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Avnet Americas | Power MOSFET, N Channel, 40 V, 70 A, 0.0035 ohm, TO-220AB, Through Hole - Rail/Tube (Alt: RX3G07CGNC16) Min Qty: 1000 Package Multiple: 1000 Container: Tube | 0 |
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$1.0387 / $1.1825 | Buy Now |
DISTI #
755-RX3G07CGNC16
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Mouser Electronics | MOSFETs Nch 40V 70A, TO-220AB, Power MOSFET RoHS: Compliant | 840 |
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$1.0300 / $2.3800 | Buy Now |
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Quest Components | 468 |
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$1.3316 / $3.2280 | Buy Now | |
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Ameya Holding Limited | Nch 40V 70A, TO-220AB, Power MOSFET Min Qty: 1 | 50-Authorized Distributor |
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$1.1300 / $2.4700 | Buy Now |
DISTI #
C1S625901995950
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Chip1Stop | MOSFET Container: Tube | 444 |
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$0.7570 / $2.1800 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 | 586 |
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$0.8070 / $2.2410 | Buy Now |
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RX3G07CGNC16
ROHM Semiconductor
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Datasheet
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RX3G07CGNC16
ROHM Semiconductor
Power Field-Effect Transistor, 70A I(D), 40V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | ROHM CO LTD | |
Reach Compliance Code | compliant | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 35 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 70 A | |
Drain-source On Resistance-Max | 0.0047 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 135 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 78 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |