Datasheets
RX3P07CBHC16 by: ROHM Semiconductor

Power Field-Effect Transistor, 120A I(D), 100V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Part Details for RX3P07CBHC16 by ROHM Semiconductor

Overview of RX3P07CBHC16 by ROHM Semiconductor

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Price & Stock for RX3P07CBHC16

Part # Distributor Description Stock Price Buy
DISTI # 69AK5074
Newark Mosfet, N-Ch, 100V, 120A, To-220Ab Rohs Compliant: Yes |Rohm RX3P07CBHC16 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 97
  • 1 $5.6600
  • 10 $4.7500
  • 25 $4.4500
  • 50 $4.1400
  • 100 $3.8400
  • 250 $3.6300
  • 500 $3.4100
$3.4100 / $5.6600 Buy Now
DISTI # 846-RX3P07CBHC16-ND
DigiKey NCH 100V 70A, TO-220AB, POWER M Min Qty: 1 Lead time: 21 Weeks Container: Tube 992
In Stock
  • 1 $5.4400
  • 10 $4.5660
  • 100 $3.6942
  • 500 $3.2837
  • 1,000 $2.8117
  • 2,000 $2.6475
$2.6475 / $5.4400 Buy Now
DISTI # RX3P07CBHC16
Avnet Americas Power MOSFET, N Channel, 100 V, 120A, 5.2 Milliohms, TO-220AB, 3 Pins, Through Hole - Rail/Tube (Alt: RX3P07CBHC16) Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
  • 1,000 $3.0074
  • 2,000 $2.9464
  • 4,000 $2.8854
  • 6,000 $2.8245
  • 8,000 $2.7635
  • 10,000 $2.7026
  • 100,000 $2.6416
$2.6416 / $3.0074 Buy Now
DISTI # 755-RX3P07CBHC16
Mouser Electronics MOSFET RX3P07CBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching. RoHS: Compliant 2000
  • 1 $5.4400
  • 10 $4.5700
  • 25 $4.3100
  • 100 $3.7000
  • 250 $3.4900
  • 500 $3.3000
  • 1,000 $2.7900
  • 2,000 $2.6400
$2.6400 / $5.4400 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 21 Weeks Container: Tube 0
Tube
  • 1,000 $2.6100
$2.6100 Buy Now
Quest Components   72
  • 1 $5.4480
  • 20 $3.6320
  • 70 $3.3596
$3.3596 / $5.4480 Buy Now
Ameya Holding Limited   Min Qty: 1 100-Authorized Distributor
  • 1 $5.7100
  • 10 $5.1260
  • 100 $4.2001
  • 500 $3.5755
  • 1,000 $3.0155
$3.0155 / $5.7100 Buy Now
DISTI # RX3P07CBHC16
Avnet Silica Power MOSFET, N Channel, 100 V, 120A, 5.2 Milliohms, TO-220AB, 3 Pins, Through Hole (Alt: RX3P07CBHC16) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 23 Weeks, 0 Days Silica - 0
Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 90
  • 1 $7.9590
  • 10 $2.4110
  • 30 $2.0000
  • 50 $1.9180
  • 100 $1.8570
  • 300 $1.8160
$1.8160 / $7.9590 Buy Now

Part Details for RX3P07CBHC16

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RX3P07CBHC16 Part Data Attributes

RX3P07CBHC16 ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RX3P07CBHC16 ROHM Semiconductor Power Field-Effect Transistor, 120A I(D), 100V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 99 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0052 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 33 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 135 W
Pulsed Drain Current-Max (IDM) 480 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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