Part Details for S2M0025120D by Sangdest Microelectronics (Nanjing) Co Ltd
Overview of S2M0025120D by Sangdest Microelectronics (Nanjing) Co Ltd
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Applications
Internet of Things (IoT)
Environmental Monitoring
Space Technology
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Renewable Energy
Electronic Manufacturing
Communication and Networking
Robotics and Drones
Part Details for S2M0025120D
S2M0025120D CAD Models
S2M0025120D Part Data Attributes
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S2M0025120D
Sangdest Microelectronics (Nanjing) Co Ltd
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S2M0025120D
Sangdest Microelectronics (Nanjing) Co Ltd
Power Field-Effect Transistor, 63A I(D), 1200V, 0.034ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | SANGDEST MICROELECTRONICS (NANJING) CO LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 63 A | |
Drain-source On Resistance-Max | 0.034 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 7 pF | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 446 W | |
Pulsed Drain Current-Max (IDM) | 250 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |