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Power Field-Effect Transistor
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SCT040HU65G3AG by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
83AK4851
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Newark | Sic Mosfet, N-Ch, 650V, 30A, Hu3Pak-7, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:650V, No. Of Pins:7Pins, Rds(On) Test Voltage:18V, Power Dissipation:221W Rohs Compliant: Yes |Stmicroelectronics SCT040HU65G3AG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 144 |
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$9.3700 / $16.1400 | Buy Now |
DISTI #
SCT040HU65G3AG
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Avnet Americas | Silicon Carbide MOSFET, Single, N Channel, 30 A, 650 V, 55 Milliohms, HU3PAK, 8 Pins - Tape and Reel (Alt: SCT040HU65G3AG) RoHS: Not Compliant Min Qty: 600 Package Multiple: 600 Lead time: 40 Weeks, 0 Days Container: Reel | 530 |
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$8.9286 / $9.4937 | Buy Now |
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STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an HU3PAK package RoHS: Compliant Min Qty: 1 | 370 |
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$9.2300 / $15.8200 | Buy Now |
DISTI #
SCT040HU65G3AG
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TME | Transistor: N-MOSFET, unipolar Min Qty: 1 | 0 |
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$11.3900 / $16.3100 | RFQ |
DISTI #
SCT040HU65G3AG
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Avnet Silica | Silicon Carbide MOSFET, Single, N Channel, 30 A, 650 V, 55 Milliohms, HU3PAK, 8 Pins (Alt: SCT040HU65G3AG) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
C1S730201996340
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Chip One Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 600 |
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$9.0400 / $15.4000 | Buy Now |
DISTI #
SCT040HU65G3AG
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EBV Elektronik | Silicon Carbide MOSFET Single N Channel 30 A 650 V 55 Milliohms HU3PAK 8 Pins (Alt: SCT040HU65G3AG) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 41 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | HU3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS | 2 |
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$16.1546 / $16.7394 | Buy Now |
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SCT040HU65G3AG
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
SCT040HU65G3AG
STMicroelectronics
Power Field-Effect Transistor
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 40 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.063 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 13 pF | |
JESD-30 Code | R-PSSO-G7 | |
Number of Elements | 1 | |
Number of Terminals | 7 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 221 W | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |