Datasheets
SCT040HU65G3AG by: STMicroelectronics

Power Field-Effect Transistor

Part Details for SCT040HU65G3AG by STMicroelectronics

Results Overview of SCT040HU65G3AG by STMicroelectronics

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SCT040HU65G3AG Information

SCT040HU65G3AG by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SCT040HU65G3AG

Part # Distributor Description Stock Price Buy
DISTI # 83AK4851
Newark Sic Mosfet, N-Ch, 650V, 30A, Hu3Pak-7, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:650V, No. Of Pins:7Pins, Rds(On) Test Voltage:18V, Power Dissipation:221W Rohs Compliant: Yes |Stmicroelectronics SCT040HU65G3AG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 144
  • 1 $16.1400
  • 10 $11.6800
  • 25 $10.9300
  • 50 $10.1700
  • 100 $9.6000
  • 250 $9.4000
  • 500 $9.3900
  • 1,200 $9.3700
$9.3700 / $16.1400 Buy Now
DISTI # SCT040HU65G3AG
Avnet Americas Silicon Carbide MOSFET, Single, N Channel, 30 A, 650 V, 55 Milliohms, HU3PAK, 8 Pins - Tape and Reel (Alt: SCT040HU65G3AG) RoHS: Not Compliant Min Qty: 600 Package Multiple: 600 Lead time: 40 Weeks, 0 Days Container: Reel 530
  • 600 $9.4937
  • 1,200 $9.4340
  • 2,400 $9.2593
  • 3,600 $9.0909
  • 4,800 $8.9286
$8.9286 / $9.4937 Buy Now
STMicroelectronics Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an HU3PAK package RoHS: Compliant Min Qty: 1 370
  • 1 $15.8200
  • 10 $11.4500
  • 25 $11.4500
  • 50 $11.4500
  • 100 $9.2300
  • 250 $9.2300
$9.2300 / $15.8200 Buy Now
DISTI # SCT040HU65G3AG
TME Transistor: N-MOSFET, unipolar Min Qty: 1 0
  • 1 $16.3100
  • 10 $14.5700
  • 100 $12.5200
  • 600 $11.3900
$11.3900 / $16.3100 RFQ
DISTI # SCT040HU65G3AG
Avnet Silica Silicon Carbide MOSFET, Single, N Channel, 30 A, 650 V, 55 Milliohms, HU3PAK, 8 Pins (Alt: SCT040HU65G3AG) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # C1S730201996340
Chip One Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 600
  • 1 $15.4000
  • 5 $12.4000
  • 10 $11.2000
  • 50 $10.7000
  • 100 $10.2000
  • 200 $9.0600
  • 600 $9.0400
$9.0400 / $15.4000 Buy Now
DISTI # SCT040HU65G3AG
EBV Elektronik Silicon Carbide MOSFET Single N Channel 30 A 650 V 55 Milliohms HU3PAK 8 Pins (Alt: SCT040HU65G3AG) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 41 Weeks, 0 Days EBV - 0
Buy Now
LCSC HU3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS 2
  • 1 $16.7394
  • 10 $16.1546
$16.1546 / $16.7394 Buy Now

Part Details for SCT040HU65G3AG

SCT040HU65G3AG CAD Models

SCT040HU65G3AG Part Data Attributes

SCT040HU65G3AG STMicroelectronics
Buy Now Datasheet
Compare Parts:
SCT040HU65G3AG STMicroelectronics Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 40 Weeks
Samacsys Manufacturer STMicroelectronics
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.063 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 13 pF
JESD-30 Code R-PSSO-G7
Number of Elements 1
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 221 W
Pulsed Drain Current-Max (IDM) 160 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

SCT040HU65G3AG Frequently Asked Questions (FAQ)

  • STMicroelectronics recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.

  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.

  • The maximum allowed voltage on the gate driver is 20V, as specified in the datasheet. Exceeding this voltage may damage the device.

  • Yes, the SCT040HU65G3AG is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, ensure you follow the recommended design and testing guidelines.

  • Follow proper ESD handling procedures, use ESD-protective packaging, and consider adding ESD protection devices in the circuit design.

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