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Part Details for SCT10N120 by STMicroelectronics
Overview of SCT10N120 by STMicroelectronics
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SCT10N120
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
07AH6931
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Newark | Mosfet, N-Ch, 1.2Kv, 12A, 150W, Hip247, Transistor Polarity:N Channel, Continuous Drain Current Id:12A, Drain Source Voltage Vds:1.2Kv, On Resistance Rds(On):0.5Ohm, Rds(On) Test Voltage Vgs:20V, Threshold Voltage Vgs:3.5V, Power Rohs Compliant: Yes |Stmicroelectronics SCT10N120 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 400 |
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$8.7400 / $13.1300 | Buy Now |
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DISTI #
497-16597-5-ND
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DigiKey | SICFET N-CH 1200V 12A HIP247 Min Qty: 1 Lead time: 41 Weeks Container: Tube |
238 In Stock |
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$4.0885 / $7.6900 | Buy Now |
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DISTI #
SCT10N120
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Avnet Americas | Trans MOSFET N-CH 1200V 12A 3-Pin HiP247 Tube - Bulk (Alt: SCT10N120) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 41 Weeks, 0 Days Container: Bulk | 0 |
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$4.1760 / $4.7520 | Buy Now |
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DISTI #
511-SCT10N120
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Mouser Electronics | MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm RoHS: Compliant | 1168 |
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$5.4900 / $7.6900 | Buy Now |
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DISTI #
V36:1790_16518943
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube Min Qty: 1 Package Multiple: 1 Lead time: 41 Weeks Date Code: 2407 | Americas - 5330 |
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$4.0780 / $7.5870 | Buy Now |
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DISTI #
E02:0323_09136315
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube Min Qty: 30 Package Multiple: 30 Lead time: 41 Weeks Date Code: 2407 | Europe - 30 |
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$5.5688 | Buy Now |
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STMicroelectronics | Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package RoHS: Compliant Min Qty: 1 | 1168 |
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$5.3900 / $7.5400 | Buy Now |
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Future Electronics | N-Channel 1200 V 520 mΩ 22 nC Silicon Carbide power Mosfet - HiP247 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 600Tube |
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$4.7600 / $5.2400 | Buy Now |
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Future Electronics | N-Channel 1200 V 520 mΩ 22 nC Silicon Carbide power Mosfet - HiP247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube | 0Tube |
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$4.7600 / $5.2300 | Buy Now |
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Future Electronics | N-Channel 1200 V 520 mΩ 22 nC Silicon Carbide power Mosfet - HiP247 RoHS: Compliant pbFree: Yes Min Qty: 600 Package Multiple: 30 Container: Tube | 0Tube |
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$4.7600 / $5.2300 | Buy Now |
Part Details for SCT10N120
SCT10N120 CAD Models
SCT10N120 Part Data Attributes:
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SCT10N120
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
SCT10N120
STMicroelectronics
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Manufacturer Package Code | HiP247 IN LINE | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 41 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.69 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 9 pF | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
Alternate Parts for SCT10N120
This table gives cross-reference parts and alternative options found for SCT10N120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SCT10N120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STH12N120K5-2 | N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in H2PAK-2 package | STMicroelectronics | SCT10N120 vs STH12N120K5-2 |
| STP12N120K5 | N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package | STMicroelectronics | SCT10N120 vs STP12N120K5 |
| STFW12N120K5 | N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-3PF packge | STMicroelectronics | SCT10N120 vs STFW12N120K5 |